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BC262B PDF预览

BC262B

更新时间: 2024-01-19 23:55:11
品牌 Logo 应用领域
COMSET /
页数 文件大小 规格书
3页 145K
描述
Transistor

BC262B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.69最大集电极电流 (IC):0.1 A
配置:SingleJESD-609代码:e0
最高工作温度:175 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
标称过渡频率 (fT):200 MHzBase Number Matches:1

BC262B 数据手册

 浏览型号BC262B的Datasheet PDF文件第2页浏览型号BC262B的Datasheet PDF文件第3页 
PNP BC261 – BC262 – BC263  
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS  
They are silicon planar epitaxial PNP transistors mounted in TO-18 metal package.  
The BC261 is intended for audio amplifier driver tages.  
The BC262 is intended for general purpose applications.  
The BC262 is intended for low noise, high gain pre-amplifier tage.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
BC261 BC262 BC263  
Symbol  
Unit  
VCEO  
VCES  
VEBO  
IC  
ICM  
PD  
Collector-Emitter Voltage (IB =0)  
Collector- Emitter Voltage (VBE =0)  
Emitter-Base Voltage (IC =0)  
Collector Current  
-45  
-50  
-25  
-30  
-5  
-100  
-200  
-25  
-30  
V
V
V
mA  
mA  
mW  
°C  
°C  
Collector Peak Current  
Total Power Dissipation  
Junction Temperature  
@ Tamb = 25°  
300  
175  
-55 to +150  
TJ  
TStg  
Storage Temperature range  
ELECTRICAL CHARACTERISTICS  
Tj=25°C unless otherwise specified  
Symbol  
Ratings  
Test Condition(s) Min  
Typ  
Max  
-50  
Unit  
nA  
VCB =-45 V  
BC261  
BC261  
-
-
-
-
VCB = -45 V  
Tj = 150°C  
-50  
µA  
Collector Cutoff Current  
IE = 0  
ICBO  
BC262  
BC263  
BC262  
BC263  
BC261  
BC262  
BC263  
BC261  
BC262  
BC263  
BC261  
BC262  
BC263  
VCB =-20 V  
-
-
-
-
-50  
-50  
nA  
µA  
VCB = -20 V  
Tj = 150°C  
-45  
-25  
-25  
-50  
-30  
-30  
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter  
Breakdown Voltage  
IC = -2 mA  
IB = 0  
VCEO  
VCES  
VEBO  
V
V
V
Collector- Emitter Voltage IC = -10 µA  
(VBE =0) VBE = 0  
Emitter-Base Breakdown IE = -10 µA  
Voltage IC = 0  
-5  
-
-
18/10/2012  
COMSET SEMICONDUCTORS  
1 | 3  

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