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BBY6602VH6327XTSA1 PDF预览

BBY6602VH6327XTSA1

更新时间: 2024-11-15 14:49:07
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
8页 93K
描述
Variable Capacitance Diode,

BBY6602VH6327XTSA1 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:6 weeks风险等级:1.68
Is Samacsys:N二极管类型:VARIABLE CAPACITANCE DIODE
JESD-609代码:e3峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Tin (Sn)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BBY6602VH6327XTSA1 数据手册

 浏览型号BBY6602VH6327XTSA1的Datasheet PDF文件第2页浏览型号BBY6602VH6327XTSA1的Datasheet PDF文件第3页浏览型号BBY6602VH6327XTSA1的Datasheet PDF文件第4页浏览型号BBY6602VH6327XTSA1的Datasheet PDF文件第5页浏览型号BBY6602VH6327XTSA1的Datasheet PDF文件第6页浏览型号BBY6602VH6327XTSA1的Datasheet PDF文件第7页 
BBY66...  
Silicon Tuning Diodes  
High capacitance ratio  
High Q hyperabrupt tuning diode  
Low series resistance  
Designed for low tuning voltage operation  
for VCO's in mobile communications equipment  
Very low capacitance spread  
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BBY66-02V  
BBY66-05  
BBY66-05W  
3
D
2
1
2
D
1
1
2
Type  
Package  
SC79  
Configuration  
single  
L (nH) Marking  
S
BBY66-02V  
BBY66-05  
0.6  
1.8  
1.4  
h
SOT23  
SOT323  
common cathode  
common cathode  
O1s / O2s**  
OBs  
BBY66-05W  
**For differences see next page Capacitance groups  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
Unit  
V
12  
Diode reverse voltage  
Forward current  
V
R
50  
mA  
°C  
I
F
Operating temperature range  
T
T
-55 ... 150  
-55 ... 150  
op  
Storage temperature  
stg  
1
Pb-containing package may be available upon special request  
2007-04-20  
1

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