生命周期: | Obsolete | 包装说明: | R-PDSO-G3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.83 |
其他特性: | LOW INDUCTANCE | 最小击穿电压: | 10 V |
配置: | COMMON ANODE, 2 ELEMENTS | 二极管电容容差: | 4.89% |
最小二极管电容比: | 1.15 | 标称二极管电容: | 18.3 pF |
二极管元件材料: | SILICON | 二极管类型: | VARIABLE CAPACITANCE DIODE |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 变容二极管分类: | HYPERABRUPT |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BBY58-07L4 | INFINEON |
获取价格 |
Silicon Tuning Diodes | |
BBY58-07L4E6327 | INFINEON |
获取价格 |
Diode, | |
BBY59 | INFINEON |
获取价格 |
Silicon Tuning Diode | |
BBY59_07 | INFINEON |
获取价格 |
Silicon Tuning Diode | |
BBY59-02V | INFINEON |
获取价格 |
Silicon Tuning Diode | |
BBY62 | KEXIN |
获取价格 |
UHF variable capacitance double diode | |
BBY62 | TYSEMI |
获取价格 |
Excellent linearity Small plastic SMD packageC28:1.9 pFratio: 8.3. | |
BBY62 | YAGEO |
获取价格 |
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 17.5pF C(T), Sili | |
BBY62 | NXP |
获取价格 |
UHF variable capacitance double diode | |
BBY62,215 | NXP |
获取价格 |
BBY62 |