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BBY58-07L4 PDF预览

BBY58-07L4

更新时间: 2024-11-13 22:10:19
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
3页 113K
描述
Silicon Tuning Diodes

BBY58-07L4 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DFN包装说明:LEADLESS, TSLP-4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.87最小击穿电压:10 V
配置:SEPARATE, 2 ELEMENTS二极管电容容差:4.89%
最小二极管电容比:1.15标称二极管电容:18.3 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
JESD-30 代码:R-XBCC-N4JESD-609代码:e0
元件数量:2端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:10 V
最大反向电流:0.1 µA反向测试电压:8 V
子类别:Other Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
变容二极管分类:HYPERABRUPTBase Number Matches:1

BBY58-07L4 数据手册

 浏览型号BBY58-07L4的Datasheet PDF文件第2页浏览型号BBY58-07L4的Datasheet PDF文件第3页 
BBY58...  
Silicon Tuning Diodes  
Excellent linearity  
High Q hyperabrupt tuning diode  
Low series resistance  
Designed for low tuning voltage operation  
for VCO's in mobile communications equipment  
For low frequency control elements  
such as TCXOs and VCXOs  
Very low capacitance spread  
BBY58-02L/V  
BBY58-02W  
BBY58-03W  
BBY58-05W  
BBY58-06W  
BBY58-07L4  
3
3
4
3
D
1
D
2
D
2
D
2
1
2
D
1
D
1
1
2
1
2
1
2
Type  
Package  
TSLP-2-1  
SC79  
Configuration  
single, leadless  
single  
single  
single  
common cathode  
common anode  
parallel pair, leadless  
L (nH) Marking  
S
BBY58-02L*  
BBY58-02V  
BBY58-02W  
BBY58-03W  
BBY58-05W  
BBY58-06W  
BBY58-07L4*  
0.4  
0.6  
0.6  
0.6  
1.4  
1.4  
0.4  
88  
8
88  
8 yel.  
B5s  
B6s  
B8  
SCD80  
SOD323  
SOT323  
SOT323  
TSLP-4-4  
*Preliminary  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Diode reverse voltage  
Forward current  
Operating temperature range  
Storage temperature  
Symbol  
Value  
Unit  
V
mA  
°C  
10  
20  
V
R
I
F
T
T
-55 ... 150  
-55 ... 150  
op  
stg  
Jul-25-2003  
1

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