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BBY5702VH6327XTSA1 PDF预览

BBY5702VH6327XTSA1

更新时间: 2024-11-14 14:41:03
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
9页 101K
描述
Variable Capacitance Diode,

BBY5702VH6327XTSA1 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:1.67二极管类型:VARIABLE CAPACITANCE DIODE
JESD-609代码:e3湿度敏感等级:1
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BBY5702VH6327XTSA1 数据手册

 浏览型号BBY5702VH6327XTSA1的Datasheet PDF文件第2页浏览型号BBY5702VH6327XTSA1的Datasheet PDF文件第3页浏览型号BBY5702VH6327XTSA1的Datasheet PDF文件第4页浏览型号BBY5702VH6327XTSA1的Datasheet PDF文件第5页浏览型号BBY5702VH6327XTSA1的Datasheet PDF文件第6页浏览型号BBY5702VH6327XTSA1的Datasheet PDF文件第7页 
BBY57...  
Silicon Tuning Diode  
Excellent linearity  
High Q hyperabrupt tuning diode  
Low series resistance  
High capacitance ratio  
Designed for low tuning voltage operation  
for VCO's in mobile communications equipment  
For control elements such as TCXOs and VCXOs  
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BBY57-02L  
BBY57-02V  
BBY57-02W  
BBY57-05W  
3
D
2
1
2
D
1
1
2
Type  
Package  
TSLP-2  
SC79  
Configuration  
single  
L (nH) Marking  
S
BBY57-02L  
BBY57-02V  
BBY57-02W  
BBY57-05W  
0.4  
0.6  
0.6  
1.4  
55  
5
single  
SCD80  
SOT323  
single  
55  
D5s  
common cathode  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
Unit  
V
10  
Diode reverse voltage  
Forward current  
V
R
20  
mA  
°C  
I
F
Operating temperature range  
Storage temperature  
T
-55 ... 125  
-55 ... 150  
op  
T
stg  
1Pb-containing package may be available upon special request  
2007-04-20  
1

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