Datasheet > BB202M

BB202M

更新时间： 2024-10-18 20:30:47

品牌	Logo	应用领域
日立 - HITACHI		光电二极管
页数	文件大小	规格书
12页	82K
描述
RF Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN

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BB202M 数据手册

BB202M

Build in Biasing Circuit MOS FET IC

UHF RF Amplifier

ADE-208-714A (Z)

2nd. Edition

Dec. 1998

Features

Build in Biasing Circuit; To reduce using parts cost & PC board space.

Low noise characteristics;

(NF = 2.1 dB typ. at f = 900 MHz)

Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

Provide mini mold packages; MPAK-4R(SOT-143 var.)

Outline

Notes: 1. Marking is “BV–”.

2. BB202M is individual type number of HITACHI BBFET.

12 3 4 5 6 7...12

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