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BAW56WT1

更新时间: 2024-09-28 23:14:19
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关光电二极管
页数 文件大小 规格书
6页 98K
描述
Dual Switching Diode

BAW56WT1 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:SC-70包装说明:R-PDSO-G3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.23配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e0最大非重复峰值正向电流:0.5 A
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:70 V
最大反向恢复时间:0.006 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin/Lead (Sn80Pb20)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

BAW56WT1 数据手册

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Order this document  
by BAW56WT1/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
CATHODE  
1
3
2
ANODE  
3
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Reverse Voltage  
Symbol  
Max  
Unit  
Vdc  
1
2
V
R
70  
Forward Current  
I
200  
500  
mAdc  
mAdc  
F
CASE 419–02, STYLE 4  
SC–70/SOT–323  
Peak Forward Surge Current  
THERMAL CHARACTERISTICS  
Characteristic  
I
FM(surge)  
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR5 Board  
P
200  
mW  
D
T
= 25°C  
A
Derate above 25°C  
1.6  
0.625  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
JA  
D
P
(2)  
Alumina Substrate  
T
A
= 25°C  
Derate above 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
JA  
T , T  
J stg  
55 to +150  
A1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
Reverse Breakdown Voltage  
V
(BR)  
70  
Vdc  
(I  
(BR)  
= 100 µAdc)  
Reverse Voltage Leakage Current  
(V = 25 Vdc, T = 150°C)  
I
R
µAdc  
30  
2.5  
50  
R
J
(V = 70 Vdc)  
R
(V = 70 Vdc, T = 150°C)  
R
J
Diode Capacitance  
(V = 0, f = 1.0 MHz)  
R
C
V
2.0  
pF  
D
Forward Voltage  
mVdc  
F
(I = 1.0 mAdc)  
715  
855  
1000  
1250  
F
(I = 10 mAdc)  
F
(I = 60 mAdc)  
F
(I = 150 mAdc)  
F
Reverse Recovery Time  
t
rr  
6.0  
ns  
(I = I = 10 mAdc, R = 100 , I  
= 1.0 mAdc) (Figure 1)  
F
R
L
R(REC)  
1. FR5 = 1.0  
0.75 0.062 in.  
2. Alumina = 0.4  
0.3  
0.024 in. 99.5% alumina.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1997  

BAW56WT1 替代型号

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