Datasheet > BAV99

BAV99

更新时间： 2024-11-13 06:41:31

品牌	Logo	应用领域
SSC		二极管开关光电二极管 PC
页数	文件大小	规格书
2页	194K
描述
Surface-mount Dual Switching Diodes

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BAV99 数据手册

BAV99

Surface-mount Dual Switching Diodes

Voltage range 75 Volts

Power Dissipation 350 mWatts

SOT-23

FEATURES

0.020(0.51)

0.015(0.37)

Fast switching speed

Surface mount package ideally suited for

automatic insertion

0.055(1.40) 0.098(2.50)

0.047(1.19) 0.083(2.10)

For general purpose switching applications

High conductance

0.041(1.05)

0.080(2.05)

0.070(1.78)

0.024(0.61)

0.018(0.45)

0.047(0.89)

MECHANICAL DATA

Case: SOT-23, Molded plastic

Terminals: Matte tin plating

0.120(3.05)

0.104(2.65)

0.043(1.10)

0.035(0.89)

Polarity: See diagram

Marking: JE

0.007(0.178)

0.003(0.076)

0.006(0.15)

0.001(0.013)

0.024(0.61)

0.018(0.45)

Weight: 0.008 gram (approx.)

Dimensions in inches and (millimeters)

Pb-free lead finish (second-level interconnect).

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

BAV99

Units

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRM

VRRM

VRWM

100

RMS Reverse Voltage

VR(RMS)

IFM

300

150

Forward Continuous Current (Note 1)

Average Rectifier Output Current (Note 1)

Non-Repetitive Peak Forward Surge Current

@ t=1.0uS

@ t=1.0S

2.0

1.0

IFSM

Power Dissipation (Note 1)

Rthja

350

357

°C/W

Thermal Resistance Junction to Ambient Air

(Note 1)

Operating and Storage Temperature Range

T_J, T_STG

Symbol

-65 to + 150

°C

Parameter

Min

Max

0.715

0.855

1.0

Units

Forward Voltage

IF=1.0mA

IF= 10mA

IF = 50mA

IF=150mA

1.25

Peak Reverse Current

VR=75V

VR=75V, Tj=150°C

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ VR=25V, TJ=150°C

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ VR=20V

2.5

Junction Capacitance

VR=0, f=1.0MHz

trr

2.0

4.0

Reverse Recovery Time (Note 2)

Notes: 1. Valid provided that terminals are kept at ambient temperature.

2. Reverse recovery test conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100W

8/26/2004 Rev.1.01

www.SiliconStandard.com

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