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BAV99/E8 PDF预览

BAV99/E8

更新时间: 2024-09-24 03:54:15
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 101K
描述
Rectifier Diode, 2 Element, 0.15A, 70V V(RRM), Silicon, PLASTIC PACKAGE-3

BAV99/E8 技术参数

生命周期:Obsolete包装说明:R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.04
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
元件数量:2端子数量:3
最大输出电流:0.15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.3 W认证状态:Not Qualified
最大重复峰值反向电压:70 V最大反向恢复时间:0.006 µs
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

BAV99/E8 数据手册

 浏览型号BAV99/E8的Datasheet PDF文件第2页浏览型号BAV99/E8的Datasheet PDF文件第3页浏览型号BAV99/E8的Datasheet PDF文件第4页 
BAV99  
Vishay Semiconductors  
VISHAY  
Dual Switching Diode  
\
3
Features  
• Fast switching speed  
• High conductance  
1
2
• Surface mount package ideally suited for auto-  
matic insertion  
17435  
• Connected in series  
Marking: KJE, JE  
Packaging Codes/Options:  
Mechanical Data  
Case: SOT-23 Plastic Package  
E8/10 K per 13" reel (8 mm tape), 30 K/box  
E9/3K per 7" reel (8 mm tape), 30 K/box  
Weight: approx. 8 mg  
Parts Table  
Part  
Type differentiation  
Dual Serial  
Ordering code  
BAV99-GS08  
Marking  
Remarks  
Package  
SOT-23  
BAV99  
JE  
Tape and Reel  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VRM  
Value  
Unit  
V
Non repetitive peak reverse voltage  
100  
70  
Repetitive peak reverse voltage = Working  
peak reverse voltage = DC Blocking voltage  
VRRM  
VRWM  
VR  
=
=
V
Peak forward surge current  
Average forward current  
tp = 1s  
IFSM  
IFSM  
IFAV  
1
A
A
tp = 1 µs  
4.5  
150  
half wave rectification with resistive load and  
f 50 MHz, on ceramic substrate  
10 mm x 8 mm x 0.7 mm  
mA  
Forward current  
on ceramic substrate  
10 mm x 8 mm x 0.7 mm  
IF  
250  
300  
mA  
Power dissipation  
on ceramic substrate  
Ptot  
mW  
10 mm x 8 mm x 0.7 mm  
Maximum Thermal Resistance  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Junction ambient  
Test condition  
Symbol  
RthJA  
Value  
Unit  
K/W  
on ceramic substrate 10 mm x 8  
mm x 0.7 mm  
430  
Junction and storage temperature  
range  
Tj = Tstg  
- 55 to + 150  
°C  
Document Number 85718  
Rev. 6, 19-Feb-03  
www.vishay.com  
1

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