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BAV70-V_12 PDF预览

BAV70-V_12

更新时间: 2022-03-29 04:53:18
品牌 Logo 应用领域
威世 - VISHAY 小信号开关二极管
页数 文件大小 规格书
4页 99K
描述
Small Signal Switching Diode, Dual

BAV70-V_12 数据手册

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BAV70-V  
Vishay Semiconductors  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test conditions  
Symbol  
RthJA  
Value  
4301)  
Unit  
°C/W  
°C  
Thermal resistance junction to ambient air  
Junction temperature  
Tj  
150  
Tj = Tstg  
Storage temperature range  
- 65 to + 150  
°C  
1) Device on Fiberglass substrate, see layout on second page.  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Min.  
Typ.  
Max.  
715  
855  
1
Unit  
mV  
mV  
V
IF = 1 mA  
IF = 10 mA  
IF = 50 mA  
IF = 150 mA  
VF  
VF  
VF  
VF  
IR  
Forward voltage  
Reverse current  
1.25  
2.5  
50  
V
V
R = 70 V  
µA  
µA  
µA  
pF  
VR = 70 V, Tj = 150 °C  
VR = 25 V, Tj = 150 °C  
VR = 0, f = 1 MHz  
IR  
IR  
30  
CD  
Diode capacitance  
1.5  
IF = 10 mA to IR = 1 mA,  
trr  
Reverse recovery time  
6
ns  
VR = 6 V, RL = 100 Ω  
Typical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
1000  
100  
10  
Tj = 100 °C  
25 °C  
1
0.1  
0.01  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
- Forward Voltage (V)  
22290  
14356  
V
F
Figure 1. Forward Current vs. Forward Voltage  
Figure 2. Peak Forward Current IFM = f (tp)  
www.vishay.com  
2
For technical questions within your region, please contact one of the following: Document Number 85546  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Rev. 1.8, 12-Aug-10  

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