BAV70-V
Vishay Semiconductors
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test conditions
Symbol
RthJA
Value
4301)
Unit
°C/W
°C
Thermal resistance junction to ambient air
Junction temperature
Tj
150
Tj = Tstg
Storage temperature range
- 65 to + 150
°C
1) Device on Fiberglass substrate, see layout on second page.
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Min.
Typ.
Max.
715
855
1
Unit
mV
mV
V
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VF
VF
VF
VF
IR
Forward voltage
Reverse current
1.25
2.5
50
V
V
R = 70 V
µA
µA
µA
pF
VR = 70 V, Tj = 150 °C
VR = 25 V, Tj = 150 °C
VR = 0, f = 1 MHz
IR
IR
30
CD
Diode capacitance
1.5
IF = 10 mA to IR = 1 mA,
trr
Reverse recovery time
6
ns
VR = 6 V, RL = 100 Ω
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
1000
100
10
Tj = 100 °C
25 °C
1
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
- Forward Voltage (V)
22290
14356
V
F
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Peak Forward Current IFM = f (tp)
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85546
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.8, 12-Aug-10