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BAV170-TP-HF PDF预览

BAV170-TP-HF

更新时间: 2024-09-23 20:10:59
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 222K
描述
Rectifier Diode, 2 Element, 0.215A, 85V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3

BAV170-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.61配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3湿度敏感等级:1
元件数量:2端子数量:3
最高工作温度:150 °C最大输出电流:0.215 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.25 W最大重复峰值反向电压:85 V
最大反向恢复时间:0.003 µs表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

BAV170-TP-HF 数据手册

 浏览型号BAV170-TP-HF的Datasheet PDF文件第2页浏览型号BAV170-TP-HF的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
BAV170  
Micro Commercial Components  
Features  
x
x
·
Surface Mount Package Ideally Suited for Automatic Insertion  
Very Low Leakage Current  
250mW  
Low Leakage Diode  
85 Volts  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
Halogen free available upon request by adding suffix "-HF"  
Mechanical Data  
x
x
x
·
Case: SOT-23  
Weight: approx. 0.008 grams  
Marking Code: JX  
SOT-23  
A
D
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
·
B
C
Maximum Ratings  
F
E
Symbol  
Parameter  
Rating  
85  
Unit  
V
VRRM  
VRWM  
VR(RMS)  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
RMS Reverse Voltage  
60  
V
H
G
J
Forward Continuous Current  
Single diode loaded  
Note1  
215  
125  
500  
IF  
mA  
mA  
A
K
Double diode loaded  
Note1  
IFRM  
Repetitive Peak Forward Current  
Non-Repetitive Peak Forward Surge Current  
@ t=1.0us  
@ t=1.0ms  
@ t=1.0s  
Power Dissipation  
INCHES  
MIN  
MM  
MIN  
DIM  
A
B
C
D
E
F
G
H
J
MAX  
.120  
.104  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
4.0  
1.0  
0.5  
250  
IFSM  
.110  
.083  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
.085  
.37  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
PD  
RJA  
TJ  
mW  
K/W  
OC  
OC  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
Storage Temperature  
500  
150  
TSTG  
-65 to +150  
Note 1: Device mounted on a FR4 printed circuit board  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
K
Symbol  
Parameter  
Reverse Breakdown Voltage  
(IR=100uAdc)  
Forward Voltage (1)  
IF=1.0mAdc  
IF=10mAdc  
Min  
Typ  
Max  
Units  
Suggested Solder  
Pad Layout  
V(BR)R  
85  
---  
---  
V
.031  
.800  
---  
---  
---  
---  
---  
---  
---  
---  
0.9  
1.0  
VF  
V
.035  
.900  
IF=50mAdc  
IF=150mAdc  
1.1  
1.25  
.079  
2.000  
inches  
mm  
Leakage Current  
(VR=75Vdc)  
IR  
---  
---  
---  
5.0  
---  
nA  
pF  
Junction Capacitance  
(VR=0, f=1.0MHz)  
Reverse Recovery Time  
(IF=10mA, IR=10mA, Irr=0.1 x IR  
RL=100OHMS)  
Cj  
2.0  
.037  
.950  
trr  
---  
---  
3.0  
us  
.037  
.950  
*(1) Short duration pulse test to minimize self-heating effect.  
www.mccsemi.com  
Revision: B  
2013/01/01  
1 of 3  

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