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BAT54WT PDF预览

BAT54WT

更新时间: 2024-11-18 08:48:51
品牌 Logo 应用领域
美微科 - MCC 肖特基二极管
页数 文件大小 规格书
3页 207K
描述
200mWatt, 30Volt Schottky Barrier Diode

BAT54WT 数据手册

 浏览型号BAT54WT的Datasheet PDF文件第2页浏览型号BAT54WT的Datasheet PDF文件第3页 
BAT54WT  
thru  
M C C  
Micro Commercial Components  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
TM  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
BAT54SWT  
Features  
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Low Forward Voltage  
·
200mWatt, 30Volt  
·
Surface Mount SOT-323 Package  
Capable of 200mWatts of Power Dissipation  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
Schottky Barrier Diode  
Device  
Marking  
Pin  
Part  
Number  
Type  
SOT-323  
Configuration  
A
D
BAT54WT  
BAT54AWT  
BAT54CWT  
BAT54SWT  
KL5  
KL6  
KL7  
KL8  
Single  
Dual  
Dual  
Dual  
Figure 1  
Figure 2  
Figure 3  
Figure 4  
C
B
F
E
Maximum Ratings  
Continuous Reverse Voltage  
Forward Current  
VR  
30V  
200mA  
300mA  
600mA  
IF  
H
G
J
Repetitive Peak Forward Current  
IFRM  
IFSM  
PD  
Non-Repetitive Peak Forward Current t<1s  
Total Power Dissipation @ TA = 25°C  
Storage Temperature Range  
K
200mW  
DIMENSIONS  
INCHES  
Tstg  
-55°C to 125°C  
MM  
Junction Temperature  
Tj  
-55°C to 125°C  
DIM  
A
MIN  
.071  
.045  
.079  
MAX  
.087  
.053  
.087  
MIN  
1.80  
1.15  
2.00  
MAX  
2.20  
1.35  
2.20  
NOTE  
B
C
D
E
Electrical Characteristics @ 25 °C Unless Otherwise Specified  
.026 Nominal  
0.65Nominal  
1.20  
.047  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
Ratings  
Forward Voltage at  
IF = 0.1mA  
Symbol  
Max.  
Notes  
F
.012  
.000  
.035  
.004  
.012  
.30  
G
H
J
.000  
.90  
.100  
1.00  
.250  
.40  
240mV  
320mV  
400mV  
500mV  
1000mV  
2 uA  
.100  
.30  
IF = 1mA  
IF = 10mA  
IF = 30mA  
IF = 100mA  
VF  
K
Suggested Solder  
Pad Layout  
0.70  
Reverse Current  
Reverse Breakdown  
Voltage  
IR  
V(BR)  
VR = 25V  
>30V  
0.90  
1.90  
Capacitance  
CJ  
trr  
10pF  
5nS  
Measured at  
1.0MHz, VR=1.0V  
IF=IR=10mA;  
I(REC) = 1mA  
Reverse Recovery  
Time  
0.65  
Thermal Resistance,  
Junction to Ambient  
RθJA  
500K/W  
0.65  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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