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BAT54WS-V PDF预览

BAT54WS-V

更新时间: 2024-11-18 06:41:31
品牌 Logo 应用领域
威世 - VISHAY 小信号肖特基二极管
页数 文件大小 规格书
5页 79K
描述
Small Signal Schottky Diode

BAT54WS-V 数据手册

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BAT54WS-V  
Vishay Semiconductors  
Small Signal Schottky Diode  
Features  
• These diodes feature very low turn-on  
voltage and fast switching  
• These devices are protected by a PN  
junction guard ring against excessive  
voltage, such as electrostatic discharges  
e3  
• Lead (Pb)-free component  
20145  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Mechanical Data  
Case: SOD323 Plastic case  
Weight: approx. 4.3 mg  
Packaging Codes/Options:  
GS18/10 k per 13" reel (8 mm tape), 10 k/box  
GS08/3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Ordering code  
Type Marking  
L4  
Remarks  
BAT54WS-V  
BAT54WS-V-GS18 or BAT54WS-V-GS08  
Tape and Reel  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VRRM  
Value  
30  
Unit  
V
Repetitive peak reverse voltage  
Forward continuous current  
2001)  
3001)  
6001)  
1501)  
Tamb = 25 °C  
amb = 25 °C  
IF  
mA  
T
IFRM  
IFSM  
Ptot  
Repetitive peak forward current  
Surge forward current  
mA  
mA  
mW  
tp < 1 s, Tamb = 25 °C  
Tamb = 25 °C  
Power dissipation1)  
1) Valid provided that electrodes are kept at ambient temperature  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
Unit  
K/W  
°C  
6501)  
125  
Thermal resistance junction to ambient air  
Maximum junction temperature  
Storage temperature range  
Tj  
Tstg  
- 65 to + 150  
°C  
1) Valid provided that electrodes are kept at ambient temperature  
Document Number 85667  
Rev. 1.5, 14-Nov-06  
www.vishay.com  
1

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