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BAT54CTT1 PDF预览

BAT54CTT1

更新时间: 2024-02-25 06:30:27
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
4页 49K
描述
Dual Series Schottky Barrier Diodes

BAT54CTT1 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SC-75包装说明:HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 463-01, SC-75, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:1 week风险等级:0.7
Samacsys Description:ON Semi BAT54CTT1G, Dual SMT Schottky Switching Diode, Common Cathode, 30V 200mA, 5ns, 3-Pin SC-75配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.24 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.6 A元件数量:2
端子数量:3最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.225 W认证状态:Not Qualified
最大重复峰值反向电压:30 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40

BAT54CTT1 数据手册

 浏览型号BAT54CTT1的Datasheet PDF文件第2页浏览型号BAT54CTT1的Datasheet PDF文件第3页浏览型号BAT54CTT1的Datasheet PDF文件第4页 
BAT54CTT1  
Preferred Device  
Dual Series Schottky  
Barrier Diodes  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand held and portable applications where  
space is limited.  
http://onsemi.com  
Features  
30 VOLT  
DUAL COMMON CATHODE  
SCHOTTKY BARRIER  
DIODES  
Extremely Fast Switching Speed  
Low Forward Voltage − 0.35 Volts (Typ) @ I = 10 mAdc  
F
Pb−Free Package is Available  
1
2
ANODE  
ANODE  
3
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
CATHODE  
Rating  
Reverse Voltage  
Symbol  
Value  
Unit  
V
30  
V
R
MARKING  
DIAGRAM  
Forward Power Dissipation  
P
F
@ T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
3
Thermal Resistance,  
Junction-to-Ambient (Note 1)  
R
555  
°C/W  
q
JA  
SC−75  
CASE 463  
STYLE 3  
5CM G  
G
2
Forward Current (DC)  
I
200 Max  
55 to 125  
55 to +150  
mA  
°C  
F
1
1
Junction Temperature  
T
J
Storage Temperature Range  
T
°C  
stg  
5C  
M
G
= Device Code  
= Date Code*  
= Pb−Free Package  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
1. FR−4 board with minimum mounting pad.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BAT54CTT1  
BAT54CTT1G  
SC−75  
3000 / Tape & Reel  
3000 / Tape & Reel  
SC−75  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
Publication Order Number:  
1
October, 2005 − Rev. 2  
BAT54CTT1/D  
 

BAT54CTT1 替代型号

型号 品牌 替代类型 描述 数据表
BAT54CTT1G ONSEMI

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