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BAT54CV

更新时间: 2024-11-29 11:15:51
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管
页数 文件大小 规格书
8页 188K
描述
Two Schottky barrier double diodesProduction

BAT54CV 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.53
Is Samacsys:N配置:2 BANKS, COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F6JESD-609代码:e3
湿度敏感等级:1元件数量:4
端子数量:6最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.35 W参考标准:AEC-Q101; IEC-60134
最大重复峰值反向电压:30 V表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAT54CV 数据手册

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BAT54CV  
Two Schottky barrier double diodes  
27 December 2022  
Product data sheet  
1. General description  
Two planar Schottky barrier double diodes with common cathodes and an integrated guard ring  
for stress protection encapsulated in a SOT666 ultra small and flat lead Surface-Mounted Device  
(SMD) plastic package.  
2. Features and benefits  
Low forward voltage  
Low capacitance  
Ultra small and flat lead SMD plastic package  
Excellent coplanarity and improved thermal behavior  
3. Applications  
Ultra high-speed switching  
Voltage clamping  
Line termination  
Reverse polarity protection  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per diode  
IF  
forward current  
reverse voltage  
forward voltage  
-
-
-
-
-
-
200  
30  
mA  
V
VR  
VF  
IF = 0.1 mA; tp ≤ 300 µs; δ ≤ 0.02;  
pulsed; Tamb = 25 °C  
240  
mV  
IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;  
pulsed; Tamb = 25 °C  
-
-
-
-
-
-
-
-
320  
400  
500  
800  
mV  
mV  
mV  
mV  
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;  
pulsed; Tamb = 25 °C  
IF = 30 mA; tp ≤ 300 µs; δ ≤ 0.02;  
pulsed; Tamb = 25 °C  
IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02;  
pulsed; Tamb = 25 °C  
 
 
 
 

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