RECTRON
TECHNICAL SPECIFICATION
SEMICONDUCTOR
BAT54CW
SOT-323 SURFACE MOUNT SCHOTTKY
BARRIER DIODE
FEATURES
* Low forward voltage drop
Fast switching
*
*
*
Uitra - small surface mount package
PN Junction guard ring for transient and ESD protection
Marking: KL7
SOT-323
0.053(1.35)
0.045(1.15)
MECHANICAL DATA
* Case: Molded plastic
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
0.004(0.10)
0.000(0.00)
REF 0.021(0.53)
* Weight: 0.006 gram
0.096(2.45)
0.085(2.15)
0.016(0.40)
0.008(0.20)
0.055(1.40)
0.047(1.20)
0.087(2.20)
0.079(2.00)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Peak repetitive reverse voltage
SYMBOL
VRRM
VALUE
30
UNITS
V
working peak reverse voltage
DC blocking voltage
30
30
VRWM
VR
µA
µA
µA
Forward contiunous current (Note 1)
Repetitive peak forward current (Note 1)
Forward surge current (Note 1)
Power dissipation (Note 1)
IF
200
300
600
200
625
IFRM
@ t < 1.0 s
IFSM
PD
µW
RqJA
Κ/Ω
Thermal resistance, Junction to ambient air (Note 1)
Operating and storage temperature range
oC
-65~+125
Tj, Tstg
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
UNITS
V
CHARACTERISTICS
SYMBOL
MIN
30
TYP
-
MAX
-
Reveres breakdown voltage (IRS= 100mA)
V(BR)R
-
-
-
-
-
-
240
320
400
(I = 0.1mA)
F
(I = 1mA)
F
mV
Forward voltage (Note 2)
(I = 10mA)
F
VF
(I = 30mA)
F
-
-
-
-
-
-
-
500
1000
2.0
(I = 100mA)
F
Reverse leakage current (V = 25V) (Note 2)
R
-
-
mA
IR
10
F
P
Cj
trr
Junction capacitance (V = 1.0V, f= 1.0MHz)
R
Reveres recovery time (I =10mA through I =10mA to I =1.0mA,R =100W)
-
5.0
ns
F
R
R
L
2006-3
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. t <300ms, duty cycle <2%.
p
DS30065 Rev. 2P-1