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BAT54CLT1G PDF预览

BAT54CLT1G

更新时间: 2024-02-11 08:01:08
品牌 Logo 应用领域
安森美 - ONSEMI 二极管光电二极管
页数 文件大小 规格书
4页 50K
描述
Dual Series Schottky Barrier Diodes

BAT54CLT1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 318-08, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:1 week风险等级:0.72
Samacsys Description:Schottky 30V 200mA Com.Cathode SOT23 ON Semiconductor BAT54CLT1G Schottky Diode, 200mA, 30V, 5ns, 3-Pin SOT-23配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.24 VJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.6 A
元件数量:2端子数量:3
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.225 W
认证状态:Not Qualified最大重复峰值反向电压:30 V
最大反向恢复时间:0.005 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40

BAT54CLT1G 数据手册

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BAT54CLT1  
Preferred Device  
Dual Series Schottky  
Barrier Diodes  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand−held and portable applications where  
space is limited.  
http://onsemi.com  
30 VOLT  
DUAL COMMON CATHODE  
SCHOTTKY BARRIER DIODES  
Features  
Pb−Free Package is Available  
Extremely Fast Switching Speed  
Low Forward Voltage − 0.35 Volts (Typ) @ I = 10 mAdc  
F
1
2
ANODE  
ANODE  
3
CATHODE  
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
MARKING  
DIAGRAM  
Rating  
Reverse Voltage  
Forward Power Dissipation  
Symbol  
Value  
Unit  
V
R
30  
V
P
F
3
3
@ T = 25°C  
225  
1.8  
mW  
mW/°C  
A
SOT−23  
CASE 318  
STYLE 9  
Derate above 25°C  
5C M  
1
Thermal Resistance,  
Junction-to-Ambient  
R
508 (Note 1)  
311 (Note 2)  
°C/W  
q
JA  
2
1
2
Forward Current (DC)  
Junction Temperature  
I
200 Max  
125 Max  
mA  
°C  
F
5C  
M
= Device Code  
= Date Code  
T
J
Storage Temperature Range  
T
stg  
55 to +150  
°C  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
1. FR−4 @ Minimum Pad.  
2. FR−4 @ 1.0 x 1.0 inch Pad.  
BAT54CLT1  
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
BAT54CLT1G  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
September, 2004 − Rev. 2  
BAT54SLT1/D  
 

BAT54CLT1G 替代型号

型号 品牌 替代类型 描述 数据表
BAT54CLT1 ONSEMI

完全替代

Dual Series Schottky Barrier Diodes
BAT54CTT1G ONSEMI

类似代替

Dual Series Schottky Barrier Diodes
BAT54CXV3T1G ONSEMI

类似代替

Dual Series Schottky Barrier Diodes

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