Datasheet > BAT54AW.115

BAT54AW.115

更新时间： 2024-01-14 15:45:32

品牌	Logo	应用领域
恩智浦 - NXP		二极管
页数	文件大小	规格书
11页	287K
描述
Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a very small SOT323

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中文翻译

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数据手册

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BAT54AW.115 数据手册

BAT54W series

SOT323

Schottky barrier diodes

Rev. 3 — 20 November 2012

Product data sheet

1. Product profile

1.1 General description

Planar Schottky barrier diodes with an integrated guard ring for stress protection,

encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic

package.

1.2 Features and benefits

 Low forward voltage

 Low capacitance

 AEC-Q101 qualified

1.3 Applications

 Ultra high-speed switching

 Line termination

 Voltage clamping

 Reverse polarity protection

1.4 Quick reference data

Table 1.

Quick reference data

T_amb= 25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

V_R

V_F

I_R

reverse voltage

forward voltage

reverse current

800

[1]

I_F= 100 mA

V_R= 25 V

A

[1] Pulse test: t_p 300 s;   0.02.

2. Pinning information

Table 2.

Pinning

Description

Simplified outline

Graphic symbol

BAT54W

anode

not connected

cathode

n.c.

006aaa436

12 3 4 5 6 7...11

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