February 2005
BAT54/A/C/S
Schottky Diodes
Connection Diagram
BAT54
BAT54A
3
3
3
3
L4P
2
1
1
2NC
2
1
2
BAT54C
BAT54S
MARKING
= L4P BAT54A = L42
= L43 BAT54S = L44
3
3
1
BAT54
BAT54C
SOT-23
1
2
1
2
Absolute Maximum Ratings *
T = 25°C unless otherwise noted
a
Symbol
RRM
F(AV)
FSM
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Value
30
Unit
V
V
I
I
200
mA
mA
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
600
T
T
Storage Temperature Range
-55 to +150
-55 to +150
°C
°C
STG
J
Operating Junction Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
D
Parameter
Value
290
Unit
mW
P
Power Dissipation
R
Thermal Resistance, Junction to Ambient
430
°C/W
θJA
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
R
Parameter
Conditions
Min.
30
Max.
Units
V
V
Breakdown Voltage
I
= 10µA
V
R
Forward Voltage
I
I
I
I
I
= 0.1mA
= 1mA
= 10mA
= 30mA
= 100mA
240
320
400
500
0.8
mV
mV
mV
mV
V
F
F
F
F
F
F
I
Reverse Leakage
V
V
= 25V
2
µA
pF
ns
R
R
R
C
Total Capacitance
= 1V, f = 1.0MHz
10
5.0
T
t
Reverse Recovery Time
I = I = 10mA, I = 1.0mA,
F R RR
R = 100Ω
rr
L
©2005 Fairchild Semiconductor Corporation
BAT54/A/C/S Rev. E1
1
www.fairchildsemi.com