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BAT54-02V-V-G_15 PDF预览

BAT54-02V-V-G_15

更新时间： 2024-10-29 01:24:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 78K
描述
Small Signal Schottky Diode

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BAT54-02V-V-G_15 数据手册

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BAT54-02V-V-G  
Vishay Semiconductors  
www.vishay.com  
Small Signal Schottky Diode  
FEATURES  
• This diode features very low turn-on voltage and  
fast switching  
1
2
• This device is protected by a PN junction guard  
ring against excessive voltage, such as  
electrostatic discharges  
22321  
• Space saving SOD-523 package  
MECHANICAL DATA  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
Case: SOD-523  
Weight: approx. 1.4 mg  
Molding compound flammability rating: UL94 V-0  
Terminals: high temperature soldering guaranteed:  
260 °C/4 x 10 s at terminals  
Packaging codes/options:  
18/3K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
INTERNAL  
CONSTRUCTION  
PART  
ORDERING CODE  
TYPE MARKING  
REMARKS  
BAT54-02V-V-G  
BAT54-02V-V-G-18 or BAT54-02V-V-G-08  
Single diode  
.V  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Repetitive peak reverse voltage  
= working peak reverse voltage  
VRRM  
30  
V
Forward continuous current  
Repetitive peak forward current  
Surge forward current  
IF  
200  
300  
600  
150  
mA  
mA  
mA  
mW  
IFRM  
IFSM  
Ptot  
Power dissipation  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
680  
UNIT  
K/W  
°C  
Thermal resistance junction to ambient air  
Junction temperature  
125  
Storage temperature range  
Tstg  
- 65 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
Reverse breakdown voltage  
100 μA pulses  
V(BR)  
30  
V
Pulse test tp < 300 μs,  
< 2 % at VR = 25 V  
Leakage current  
Forward voltage  
IR  
2
μA  
IF = 0.1mA, tp < 300 μs, < 2 %  
IF = 1 mA, tp < 300 μs, < 2 %  
IF = 10 mA, tp < 300 μs, < 2 %  
IF = 30 mA, tp < 300 μs, < 2 %  
IF = 100 mA, tp < 300 μs, < 2 %  
VF  
VF  
VF  
VF  
VF  
CD  
240  
320  
400  
500  
800  
10  
mV  
mV  
mV  
mV  
mV  
pF  
Diode capacitance  
V
R = 1 V, f = 1 MHz  
IF = 10 mA, IR = 10 mA,  
Reverse recovery time  
trr  
5
ns  
i
R = 1 mA, RL = 100   
Rev. 1.1, 21-Jan-13  
Document Number: 82394  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

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