Datasheet > BAT17-05W

BAT17-05W

更新时间： 2024-11-20 06:41:27

品牌	Logo	应用领域
科信 - KEXIN		肖特基二极管光电二极管
页数	文件大小	规格书
1页	48K
描述
Silicon Schottky Diode

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中文翻译

获取价格

数据手册

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BAT17-05W 数据手册

SMD Type

Diodes

Silicon Schottky Diode

BAT17-04W,BAT17-05W,BAT17-06W

Features

For mixer applications in VHF/UHF range

For high-speed switching application

Absolute Maximum Ratings Ta = 25

Parameter

Diode reverse voltage

Forward current

Symbol

V^R

Value

Unit

I^F

130

Ptot

T^j

150

Total power dissipation

Junction temperature

Operating temperature range

Storage temperature

Junction - soldering point(Note 1)

Note

T^S

150

Top

-55 to +125

-55 to +150

390

Tstg

RthJS

K/W

1.For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics Ta = 25

Parameter

Breakdown voltage

Symbol

V^(BR)

Conditions

I(BR) = 10

V^R= 3 V

Min

Typ

Max

Unit

0.25

Reverse current

Forward voltage

I^R

V^R= 4 V

1.25

350

450

600

V^R= 3 V, TA = 60

I^F= 0.1 mA

200

250

350

275

340

425

V^F

I^F= 1 mA

I^F= 10 mA

Forward voltage matching(Note 1)

Diode capacitance

ÄV^F

C^T

IF = 1 mA

VR = 0 , f = 1 MHz

IF = 5 mA, f = 10 KHz

0.4

0.55

0.75

Differential forward resistance

Note

R^F

1.ÄV^Fis the difference between lowest and highest VF in multiple diode component.

Marking

Type

BAT17-04W BAT17-05W BAT17-06W

54S 55S 56S

Marking

www.kexin.com.cn

中文翻译

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