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BAT17-05W PDF预览

BAT17-05W

更新时间: 2024-11-17 23:16:19
品牌 Logo 应用领域
英飞凌 - INFINEON 肖特基二极管微波混频二极管开关光电二极管
页数 文件大小 规格书
3页 42K
描述
Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications)

BAT17-05W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:5.31Is Samacsys:N
配置:COMMON CATHODE, 2 ELEMENTS最大二极管电容:0.75 pF
二极管元件材料:SILICON二极管类型:MIXER DIODE
频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCYJESD-30 代码:R-PDSO-G3
湿度敏感等级:1元件数量:2
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.15 W认证状态:Not Qualified
子类别:Microwave Mixer Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BAT17-05W 数据手册

 浏览型号BAT17-05W的Datasheet PDF文件第2页浏览型号BAT17-05W的Datasheet PDF文件第3页 
BAT 17W  
Silicon Schottky Diodes  
3
For mixer applications in the VHF / UHF range  
For high-speed switching applications  
2
1
VSO05561  
BAT 17-05W  
BAT 17W  
BAT 17-04W  
BAT 17-06W  
Type  
BAT 17W  
Marking Ordering Code  
Pin Configuration  
Package  
53s  
Q62702-A1271  
Q62702-A1272  
Q62702-A1273  
Q62702-A1274  
1 = A  
2 n.c.  
3 = C  
SOT-323  
BAT 17-04W 54s  
BAT 17-05W 55s  
BAT 17-06W 56s  
1 = A1  
1 = A1  
3 = C1  
2 = C2  
2 = A2  
2 = C2  
3 = C1/A2  
3 = C1/2  
3 = A1/2  
Maximum Ratings  
Parameter  
Symbol  
Value  
4
Unit  
V
Diode reverse voltage  
Forward current  
V
R
130  
mA  
mW  
I
F
150  
Total power dissipation 1) BAT 17W, T 97 °C P  
A
tot  
tot  
150  
BAT 17-04W, -05W, -06W  
Junction temperature  
, T 92 °CP  
S
150  
°C  
T
j
Operating temperature range  
Storage temperature  
- 55 ...+150  
- 55 ...+150  
T
T
op  
stg  
Thermal Resistance  
1)  
Junction - ambient  
Junction - ambient  
BAT 17W  
K/W  
R
435  
550  
355  
390  
thJA  
1)  
BAS 17-04W ...  
R
thJA  
Junction - soldering point BAT 17W  
R
thJS  
Junction - soldering point BAT 17-04W ...  
R
thJS  
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm)  
Semiconductor Group  
1
Sep-04-1998  
1998-11-01  
Semiconductor Group  
1

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