BAS70H-06

更新时间： 2024-02-14 03:29:06

品牌	Logo	应用领域
美台 - DIODES		肖特基二极管
页数	文件大小	规格书
1页	64K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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数据手册

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BAS70H-06 数据手册

BAS70H/ -04/ -05/ -06

SURFACE MOUNT SCHOTTKY BARRIER DIODE

DISCONTINUED

Features

Low Turn-on Voltage

SERIES

BAS70

USE

SOT-23

Min

Fast Switching

Dim

Max

0.51

1.40

2.50

1.05

0.61

2.05

3.05

0.15

1.10

0.61

0.178

PN Junction Guard Ring for Transient and

ESD Protection

0.37

1.19

2.10

0.89

0.45

1.78

2.65

0.013

0.89

0.45

0.076

TOP VIEW

Mechanical Data

Case: SOT-23, Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: See Diagrams

Approx. Weight: 0.008 grams

All Dimensions in mm

BAS70H-06 Marking: K76

BAS70H-04 Marking: K74

BAS70H-05 Marking: K75

BAS70H Marking: K73

Maximum Ratings and Electrical Characteristics, Single Diode^{@ T = 25°C unless otherwise specified}

Characteristic

Symbol

BAS70

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_F

I_FSM

P_d

RMS Reverse Voltage

200

Forward Continuous Current (Note 1)

Non-Repetitive Peak Forward Surge Current @ t_p< 1.0s

Power Dissipation (Note 1)

K/W

°C

600

200

R_qJA

T_j

Thermal Resistance Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

Storage Temperature Range

625

-55 to +125

-65 to +150

T_STG

°C

@ T_A= 25°C unless otherwise specified

Electrical Ratings

Characteristic

Symbol

V_(BR)R

Min

MaxUnit

Test

I_R= 10mA

Condition

Reverse Breakdown Voltage (Note 2)

Forward Voltage

—

t_p<300µs, I_F= 1.0mA

t_p<300µs, I_F= 15mA

410

1000

V_F

—

I_RM

C_j

t_p< 300µs, V_R= 50V

V_R= 0V, f = 1.0MHz

Peak Reverse Current

Junction Capacitance

100

2.0

I_F= I_R= 10mA to I_R= 1.0mA,

R_L=100W

t_rr

Reverse Recovery Time

—

5.0

Notes:

1. Valid Provided that terminals are kept at ambient temperature.

2. Test period <3000ms.

DS30190 Rev. 4 - 4

1 of 1

BAS70H/-04/-05/-06

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