Datasheet > BAS70-06E3

BAS70-06E3

更新时间： 2024-11-14 03:14:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
2页	122K
描述
Rectifier Diode, Schottky, 2 Element, 0.2A, 70V V(RRM), Silicon, PLASTIC PACKAGE-3

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BAS70-06E3 数据手册

BAS40

and

8700 E. Thomas Road

Scottsdale, AZ 85251

Tel: (480) 941-6300

Fax: (480) 947-1503

BAS70

SCHOTTKYarray™ SERIES

DESCRIPTION

Various configurations of Schottky barrier's diodes in SOT-23 packages are

provided for general-purpose use in high-speed switching, mixers and

detector applications. They may also be used for signal terminations at the

board level. This helps maintain signal integrity and counteract the

transmission-line effects with (PC) board traces by clamping over/and

undershoot from signal reflections with the schottky-low-threshold voltages.

This type of termination also does not depend on matching the transmission

line characteristic impedance, making it particularly useful where line

impedance is unknown or a variable. This method of termination can

control distortions of clock, data, address, and control lines as well as

provides a stabilizing effect on signal jitter. It can also significantly reduce

power consumption compared to standard resistor- based termination methods.

FEATURES

PACKAGING

Protects from line to V_CCand line to ground

Clamps within one forward diode threshold voltage

Low forward voltage and reverse recovery

characteristics

Tape & Reel EIA Standard 481

7 inch reel 3,000 pieces

13 inch reel 10,000 pieces

Bidirectional-low-forward available with “-04” suffix (Figure 2)

SOT-23 Surface Mount packaging for small foot print

MECHANICAL

MAXIMUM RATINGS

Operating Temperatures: -55⁰C to +125⁰C

Molded SOT-23 Surface Mount

Weight: .008 grams (approximate)

Body Marked with device number

Storage Temperature: -55⁰C to +150⁰C

Power dissipation at T_amb= 25⁰C is 200 mW

Forward Continuous Current at T_amb= 25⁰C is 200 mA

Surge Forward Current At t_p< 1 s, T_amb= 25⁰C is 600 mA

ELECTRICAL CHARACTERISTICS PER DIODE @ 25⁰C Unless otherwise specified

Leakage Current

Pulse test

tp < 300µs @

Reverse

Breakdown

Voltage

Repetitive

Peak Reverse

Voltage

Reverse

Recovery

Time from

I_F= 10 mA

through

Thermal

Capacitance

At V_R= 0V

F = 1 MHz

C_tot

Forward Voltage Pulse Test

tp < 300µs

Resistance

Junction to

Ambient Air

Tested with

10µA Pulse

at I_F= 1 mA

at I_F= 40 mA

For BAS40

V_R= 30 V

DEVICE

TYPE

DEVICE

MARKING

FIGURE

I_R=10mA to

I_R=1mA

For BAS70

V_RRM

(VOLTS)

_R= 50 V

V_(BR)R

(VOLTS)

V_F(mV)

_rr(ns)

R_thJA(K/W)

_R(nA)

TYP

MIN

TYP

MAX

100

I_F=1mA I_F=15mA I_F=40mA

MAX

430

MAX

BAS40

380

410

1000

BAS40-04

BAS40-05

BAS40-06

BAS70

1000

BAS70-04

BAS70-05

BAS70-06

MSC1380.PDF ISO 9001 CERTIFIED

REV C 2/02/2000

中文翻译

下载PDF

与BAS70-06E3相关器件

型号	品牌	获取价格	描述	数据表
BAS70-06-E3-08	VISHAY	获取价格	DIODE ARRAY SCHOTTKY 70V SOT23
BAS70-06-E3-18	VISHAY	获取价格	DIODE ARRAY SCHOTTKY 70V SOT23
BAS70-06E6327	ROCHESTER	获取价格	SILICON, MIXER DIODE, SMD, 3 PIN
BAS7006E6327HTSA1	INFINEON	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
BAS7006E6327XT	INFINEON	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
BAS70-06E6433	INFINEON	获取价格	Mixer Diode, Silicon, SMD, 3 PIN
BAS7006E6433HTMA1	INFINEON	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
BAS70-06FILM	STMICROELECTRONICS	获取价格	SMALL SIGNAL SCHOTTKY DIODES
BAS70-06-G	VISHAY	获取价格	Small Signal Schottky Diodes
BAS7006-G	COMCHIP	获取价格	Small Signal Schottky Diodes

与BAS70-06E3相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

25
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

10
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

11
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

BAS70-06E3

BAS70-06E3 数据手册

与BAS70-06E3相关器件

与BAS70-06E3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BAS70-06E3

BAS70-06E3 数据手册

与BAS70-06E3相关器件

与BAS70-06E3相关文章

您还可以找

您在本页遇到什么问题？