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BAS70-05 PDF预览

BAS70-05

更新时间: 2024-11-07 08:48:31
品牌 Logo 应用领域
金誉半导体 - HTSEMI 二极管开关光电二极管
页数 文件大小 规格书
2页 263K
描述
SWITCHING DIODE

BAS70-05 数据手册

 浏览型号BAS70-05的Datasheet PDF文件第2页 
BAS70/-04/-05/-06  
SWITCHING DIODE  
SOT-23  
FEATURES  
z
z
z
Low Turn-on voltage  
Fast switching  
Also available in lead free version  
BAS70 Marking: 73  
BAS70-04 Marking: 74  
BAS70-05 Marking: 75  
BAS70-06 Marking: 76  
MAXIMUM RATINGS @TA=25  
Value  
70  
Units  
V
Symbol  
Parameter  
VR  
IF  
DC Voltage  
70  
mA  
mW  
Forward Continuous Current  
Power dissipation  
200  
PD  
TJ  
150  
Junction Temperature  
Storage Temperature  
-55-150  
Tstg  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR) R  
IR  
Test  
conditions  
MIN  
MAX  
UNIT  
Reverse breakdown voltage  
IR= 10µA  
VR=50V  
70  
V
Reverse voltage  
leakage current  
120  
nA  
mV  
pF  
IF=1mA  
IF=15mA  
410  
1000  
Forward  
Diode  
voltage  
capacitance  
VF  
CD  
VR=0V  
f=1MHz  
2
IF=IR=10mA,Irr=0.1xIR,  
Reveres recovery time  
trr  
5
nS  
RL=100  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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