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BAS21W PDF预览

BAS21W

更新时间: 2024-11-25 22:48:11
品牌 Logo 应用领域
美台 - DIODES 整流二极管开关
页数 文件大小 规格书
3页 66K
描述
SURFACE MOUNT FAST SWITCHING DIODE

BAS21W 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SC-70
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.25
Samacsys Confidence:Samacsys Status:Released
Samacsys PartID:581907Samacsys Pin Count:3
Samacsys Part Category:Undefined or MiscellaneousSamacsys Package Category:Other
Samacsys Footprint Name:SOT65P210X100-3NSamacsys Released Date:2017-01-11 16:09:24
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):235认证状态:Not Qualified
最大重复峰值反向电压:250 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

BAS21W 数据手册

 浏览型号BAS21W的Datasheet PDF文件第2页浏览型号BAS21W的Datasheet PDF文件第3页 
BAS19W - BAS21W  
SURFACE MOUNT FAST SWITCHING DIODE  
Features  
·
·
Fast Switching Speed  
Surface Mount Package Ideally Suited for  
Automatic Insertion  
For General Purpose Switching Applications  
High Conductance  
A
SOT-323  
Dim  
A
B
C
D
E
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
·
·
C
B
G
H
Mechanical Data  
0.65 Nominal  
·
·
Case: SOT-323, Molded Plastic  
Case Material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
K
J
M
G
H
J
L
D
F
·
·
K
L
0.90  
0.25  
0.10  
0°  
·
·
·
·
·
Terminal Connections: See Diagram  
BAS19W Marking: KA8 or KT2 or KT3 (See Page 3)  
BAS20W Marking: KT2 or KT3 (See Page 3)  
BAS21W Marking: KT3 (See Page 3)  
Weight: 0.006 grams (approx.)  
M
a
TOP VIEW  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
BAS19W  
BAS20W  
BAS21W  
Unit  
VRRM  
Repetitive Peak Reverse Voltage  
120  
200  
250  
V
VRWM  
VR  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
100  
71  
150  
200  
141  
VR(RMS)  
IFM  
RMS Reverse Voltage  
106  
400  
200  
V
Forward Continuous Current (Note 1)  
Average Rectified Output Current (Note 1)  
mA  
mA  
IO  
2.5  
0.5  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms  
IFSM  
A
@ t = 1.0s  
IFRM  
Pd  
Repetitive Peak Forward Surge Current  
Power Dissipation  
625  
200  
mA  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
625  
Tj , TSTG  
-65 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
¾
¾
¾
Reverse Breakdown Voltage (Note 2)  
BAS19W  
BAS20W  
BAS21W  
120  
200  
250  
V(BR)R  
I
R = 100mA  
V
1.0  
1.25  
IF = 100mA  
IF = 200mA  
VF  
Forward Voltage (Note 2)  
V
¾
Tj = 25°C  
Tj = 100°C  
nA  
Reverse Current  
100  
15  
IR  
CT  
trr  
¾
¾
¾
@ Rated DC Blocking Voltage (Note 2)  
mA  
V
R = 0, f = 1.0MHz  
Total Capacitance  
5.0  
50  
pF  
IF = IR = 30mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
ns  
Notes:  
1. Part mounted on FR-4 PC board with minimum recommended pad layout, which can be found on our website at  
http:/www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
DS30118 Rev. 6 - 2  
1 of 3  
BAS19W - BAS21W  
www.diodes.com  

BAS21W 替代型号

型号 品牌 替代类型 描述 数据表
BAS21AW NEXPERIA

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BAS21SW NEXPERIA

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High-voltage switching diodeProduction

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