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BAS21X PDF预览

BAS21X

更新时间: 2024-10-01 12:23:51
品牌 Logo 应用领域
威伦 - WILLAS 二极管
页数 文件大小 规格书
3页 412K
描述
SOT-23 Plastic-Encapsulate Diodes

BAS21X 数据手册

 浏览型号BAS21X的Datasheet PDF文件第2页浏览型号BAS21X的Datasheet PDF文件第3页 
WILLAS  
BAS21x  
SOT-23 Plastic-Encapsulate Diodes  
SWITCHING DIODE  
FEATURES  
SOT-23  
z
z
z
Fast Switching Speed  
Surface Mount Package Ideally Suited for Automatic Insertion  
For General Purpose Switching Applications  
z
z
High Conductance  
Pb-Free package is available  
RoHS product for packing code suffix ”G”  
Halogen free product for packing code suffix “H”  
Moisture Sensitivity Level 1  
z
BAS21  
BAS21A  
BAS21C  
BAS21S  
Marking: JS  
Marking:JS2  
Marking:JS3  
Marking: JS4 or JT  
Maximum Ratings @Ta=25  
Parameter  
Symbol  
Limit  
Unit  
Repetitive peak reverse voltage  
Working peak reverse voltage  
DC blocking voltage  
VRRM  
VRWM  
VR  
250  
V
Forward continuous current  
Average rectified output current  
IFM  
400  
200  
2.5  
mA  
mA  
IO  
Non-repetitive peak forward surge current  
@ t = 1.0µs  
@ t = 1.0s  
IFSM  
A
0.5  
Repetitive peak forward surge current  
Power dissipation  
IFRM  
PD  
625  
225  
mA  
mW  
/W  
Thermal resistance junction to ambient  
Junction temperature  
RθJA  
TJ  
55  
150  
Storage temperature range  
TSTG  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)  
IR  
Test  
IR= 100µA  
VR=200V  
conditions  
Min  
Max  
0.1  
Unit  
Reverse breakdown voltage  
Reverse voltage leakage current  
250  
V
µA  
IF=100mA  
IF=200mA  
1000  
1250  
Forward voltage  
mV  
VF  
Diode capacitance  
CD  
trr  
VR=0V, f=1MHz  
5
pF  
Reveres recovery time  
IF=IR=30mA,Irr=0.1×IR,RL=100Ω  
50  
ns  
2012-12  
WILLAS ELECTRONIC CORP.  

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