5秒后页面跳转
BAS21T-7 PDF预览

BAS21T-7

更新时间: 2024-02-20 08:43:06
品牌 Logo 应用领域
美台 - DIODES 二极管开关
页数 文件大小 规格书
2页 59K
描述
SURFACE MOUNT FAST SWITCHING DIODE

BAS21T-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:GREEN, ULTRA SMALL, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:19 weeks风险等级:1.11
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:2.5 A
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.15 W
认证状态:Not Qualified最大重复峰值反向电压:250 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

BAS21T-7 数据手册

 浏览型号BAS21T-7的Datasheet PDF文件第2页 
BAS21T  
SURFACE MOUNT FAST SWITCHING DIODE  
Features  
·
·
·
·
Ultra-Small Surface Mount Package  
SOT-523  
TOP VIEW  
Fast Switching Speed  
Dim Min MaxTyp  
For General Purpose Switching Applications  
High Conductance  
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
B
C
¾
¾
0.50  
Mechanical Data  
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
A
G
H
·
·
Case: SOT-523, Molded Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
K
L
K
J
M
·
·
·
Polarity: See Diagram  
Marking: T3  
N
M
N
Weight: 0.002 grams (approx.)  
D
L
All Dimensions in mm  
@ T = 25°C unless otherwise specified  
A
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
Repetitive Peak Reverse Voltage  
250  
V
VRWM  
VR  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
200  
VR(RMS)  
IFM  
RMS Reverse Voltage  
141  
400  
200  
V
Forward Continuous Current  
Average Rectified Output Current  
mA  
mA  
IO  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms  
@ t = 1.0s  
2.5  
0.5  
IFSM  
A
IFRM  
Pd  
Repetitive Peak Forward Surge Current  
Power Dissipation (Note 1)  
625  
150  
833  
mA  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
Tj , TSTG  
-65 to +150  
Electrical Characteristics @ T = 25°C unless otherwise specified  
A
Characteristic  
Maximum Forward Voltage  
Symbol  
Min  
MaxUnit  
Test  
Condition  
IF = 100mA  
IF = 200mA  
1.0  
1.25  
VFM  
¾
V
Tj = 25°C  
100  
15  
nA  
mA  
Maximum Peak Reverse Current  
@ Rated DC Blocking Voltage  
IRM  
Cj  
¾
¾
¾
Tj = 100°C  
VR = 0, f = 1.0MHz  
Junction Capacitance  
5.0  
50  
pF  
ns  
IF = IR = 30mA,  
trr  
Reverse Recovery Time  
Irr = 0.1 x IR, RL = 100W  
(Note 2)  
Ordering Information  
Device  
Packaging  
Shipping  
BAS21T-7  
SOT-523  
3000/Tape & Reel  
Notes:  
1. Device mounted on FR-4 PC board with recommended pad layout, minimum.  
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
DS30264 Rev. B-2  
1 of 2  
BAS21T  

BAS21T-7 替代型号

型号 品牌 替代类型 描述 数据表
BAS21T-7-F DIODES

完全替代

SURFACE MOUNT FAST SWITCHING DIODE

与BAS21T-7相关器件

型号 品牌 获取价格 描述 数据表
BAS21T-7-F DIODES

获取价格

SURFACE MOUNT FAST SWITCHING DIODE
BAS21TA DIODES

获取价格

SURFACE MOUNT FAST SWITCHING DIODE
BAS21TC ZETEX

获取价格

Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon
BAS21TH NEXPERIA

获取价格

High-voltage switching diodeProduction
BAS21TM DIODES

获取价格

SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE ARRAY
BAS21TM-7 DIODES

获取价格

SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE ARRAY
BAS21TMQ DIODES

获取价格

Switching Diode
BAS21TMQ-13 DIODES

获取价格

Rectifier Diode, 3 Element, 0.25A, 250V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-6
BAS21TMR6 ONSEMI

获取价格

High Voltage Switching Diode
BAS21TMR6T1G ONSEMI

获取价格

High Voltage Switching Diode