Datasheet > BAS21TWV

BAS21TWV

更新时间： 2024-06-27 12:12:55

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
4页	122K
描述
Reverse Voltage Vr : 250 V;Forward Current Io : 200 mA;Max Surge Current : 2.0 A;Forward Voltage Vf : 1.25 V;Reverse Current Ir : 0.1 uA;Recovery Time : 50 ns;Package / Case : SOT-363;Mounting Style : SMT/SMD;Notes : Array;Certified (AEC-Q101...etc) : AEC-Q101

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BAS21TWV 数据手册

BAS21TWV

SURFACE MOUNT FAST SWITCHING DIODE ARRAY

Features

SOT363

Fast Switching Speed: max. 50ns

Continuous Reverse Voltage: max. 200V

Repetitive Peak Reverse Voltage: max. 250V

Repetitive Peak Forward Current: max. 1A

Small Surface Mount Package

For General Purpose Switching Applications

High Conductance

Top View

P/N suffix V means AEC-Q101qualified, e.g:BAS21TWV

Halogen-free

Mechanical Data

Case: SOT363

Case Material: Molded Plastic, "Green" Molding Compound,

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Orientation: See Diagram

Top View

Internal Schematic

Weight: 0.009 grams (approximate)

Maximum Ratings ^(@T_A= 25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Non-Repetitive Peak Reverse Voltage

250

V_RM

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

250

RMS Reverse Voltage

177

200

V_R(RMS)

I_FM

Forward Continuous Current (Note 5)

Non-Repetitive Peak Forward Surge Current

@ t = 50μs

@ t = 100μs

@ t = 10ms

I_FSM

Thermal Characteristics

Characteristic

Power Dissipation (Note 5)

Symbol

P_D

Value

300

Unit

°C/W

°C

Thermal Resistance Junction to Ambient Air (Note 5)

Operating and Storage Temperature Range

417

R_ꢀJA

-65 to +150

T_J, T_STG

Electrical Characteristics ^(@T_A= 25°C, unless otherwise specified.)

Characteristic

Reverse Breakdown Voltage (Note 6)

Symbol

V_(BR)R

Min

250

Max

ꢀ

Unit

Test Condition

I_R= 100μA

1.05ꢁ

I_F= 100mA

I_F= 200mA

ꢀꢁ

ꢀ

Forward Voltage

V_F

I_R

1.25

100

μA

V_R= 200V

V_R= 200V, T_J= +150°C

Reverse Current (Note 6)

ꢀ

Total Capacitance

C_T

t_rr

ꢀ

V_R= 6, f = 1.0MHz

V_R= 6V, I_F= 5mA

Reverse Recovery Time

2020-11/43

REV:O

Notes:

5. Part mounted on FR-4 board with recommended pad layout

6. Short duration pulse test used to minimize self-heating effect.

12 3 4

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与BAS21TWV相关器件

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BAS21U	INFINEON	获取价格	Silicon Switching Diode
BAS21U-E6327	INFINEON	获取价格	Diode,
BAS21UE6327HTSA1	INFINEON	获取价格	Rectifier Diode, 3 Element, 0.25A, 250V V(RRM), Silicon, ROHS COMPLIANT, SC-74, 6 PIN
BAS21UE6327XT	INFINEON	获取价格	Rectifier Diode, 3 Element, 0.25A, 250V V(RRM), Silicon, ROHS COMPLIANT, SC-74, 6 PIN
BAS21U-E6433	INFINEON	获取价格	Diode,
BAS21UE6433HTMA1	INFINEON	获取价格	Rectifier Diode, 3 Element, 0.25A, 250V V(RRM), Silicon, ROHS COMPLIANT, SC-74, 6 PIN
BAS21UE6727	INFINEON	获取价格	Rectifier Diode, 3 Element, 0.25A, 250V V(RRM), Silicon, ROHS COMPLIANT, SC-74, 6 PIN
BAS21V	RECTRON	获取价格	Reverse Voltage Vr : 250 V;Forward Current Io : 200 mA;Max Surge Current : 2.5 A;Forward V
BAS21-V	VISHAY	获取价格	Small Signal Switching Diodes, High Voltage
BAS21VD	NEXPERIA	获取价格	High-voltage switching diodesProduction

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