Datasheet > BAS21T-13

BAS21T-13

更新时间： 2024-01-25 20:40:37

品牌	Logo	应用领域
美台 - DIODES		光电二极管
页数	文件大小	规格书
2页	73K
描述
Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-3

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技术参数
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BAS21T-13 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.57

BAS21T-13 数据手册

SPICE MODEL: BAS21T

BAS21T

SURFACE MOUNT FAST SWITCHING DIODE

Features

Ultra-Small Surface Mount Package

SOT-523

Fast Switching Speed

Dim Min Max Typ

For General Purpose Switching Applications

High Conductance

0.15 0.30 0.22

0.75 0.85 0.80

1.45 1.75 1.60

Available in Lead Free/RoHS Compliant Version

(Note 3)

0.50

Mechanical Data

0.90 1.10 1.00

1.50 1.70 1.60

0.00 0.10 0.05

0.60 0.80 0.75

0.10 0.30 0.22

0.10 0.20 0.12

0.45 0.65 0.50

Case: SOT-523

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Also Available in Lead Free Plating (Matte Tin Finish

annealed over Alloy 42 leadframe). Please See Ordering

Information, Note 5, on Page 2

0°

8°

Polarity: See Diagram

All Dimensions in mm

Marking: T3 (See Page 2)

Weight: 0.002 grams (approx.)

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

Value

Unit

V_RRM

Repetitive Peak Reverse Voltage

250

V_RWM

V_R

Working Peak Reverse Voltage

DC Blocking Voltage

200

V_R(RMS)

I_FM

RMS Reverse Voltage

141

400

200

Forward Continuous Current (Note 1)

Average Rectified Output Current (Note 1)

I_O

Non-Repetitive Peak Forward Surge Current @ t = 1.0ms

2.5

0.5

I_FSM

@ t = 1.0s

I_FRM

P_d

Repetitive Peak Forward Surge Current

Power Dissipation (Note 1)

625

150

°C/W

°C

R_qJA

Thermal Resistance Junction to Ambient (Note 1)

Operating and Storage Temperature Range

833

T_j, T_STG

-65 to +150

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Symbol

Min

Max

Unit

Test Condition

V_(BR)R

Reverse Breakdown Voltage (Note 2)

I_R= 100mA

250

I_F= 100mA

I_F= 200mA

1.0

1.25

V_F

Forward Voltage (Note 2)

T_j= 25°C

T_j= 100°C

100

I_R

C_T

t_rr

Reverse Current @ Rated DC Blocking Voltage (Note 2)

Total Capacitance

V_R= 0, f = 1.0MHz

5.0

I_F= I_R= 30mA,

I_rr= 0.1 x I_R, R_L= 100W

Reverse Recovery Time

Notes:

1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at

http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

3. No purposefully added lead.

DS30264 Rev. 4 - 2

1 of 2

BAS21T

www.diodes.com

ã Diodes Incorporated

中文翻译

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与BAS21T-13相关器件

型号	品牌	获取价格	描述	数据表
BAS21-T1-LF	WTE	获取价格	Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
BAS21-T3	WTE	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
BAS21T-6L	BL Galaxy Electrical	获取价格	0.2A,250V,Surface Mount Small Signal Switching Diodes
BAS21T-7	DIODES	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
BAS21T-7-F	DIODES	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
BAS21TA	DIODES	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
BAS21TC	ZETEX	获取价格	Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon
BAS21TH	NEXPERIA	获取价格	High-voltage switching diodeProduction
BAS21TM	DIODES	获取价格	SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE ARRAY
BAS21TM-7	DIODES	获取价格	SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE ARRAY

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