Datasheet > BAS16WT_13

BAS16WT_13

更新时间： 2022-05-18 00:50:46

品牌	Logo	应用领域
美微科 - MCC		二极管开关
页数	文件大小	规格书
2页	191K
描述
200mW Switching Diode

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BAS16WT_13 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

BAS16WT

MMBD4148WT

Micro Commercial Components

Features

•

Power dissipation: 200mW (T_amb=25?)

200mW Switching

Diode

Average Rectified Output Current:150mA

Marking: A2, KA2, KT1

SOT-323

Maximum Ratings

•

Operating Temperature: -55R to +150R

Storage Temperature: -55R to +150R

•

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Halogen free available upon request by adding suffix "-HF"

Electrical Characteristics @ 25°C Unless Otherwise Specified

Reverse Voltage

V_R

I_F

75V

I_R=100IA

Peak Forward

Current

150mA

DIMENSIONS

INCHES

Maximum

0.715V I_FM=1mA;

DIM

MIN

.071

.045

.079

.026 Nominal

.047

.012

.000

.035

.004

.012

MAX

.087

.053

.087

MIN

1.80

1.15

2.00

MAX

2.20

1.35

2.20

NOTE

Instantaneous

Forward Voltage

V_F

0.855

1.0V

1.25V

_FM=10mA;

_FM=50mA;

_FM=150mA;

0.65Nominal

1.20

.055

.016

.004

.039

.010

.016

1.40

.40

.100

1.00

.250

.40

Maximum DC

.30

.000

.90

.100

.30

Reverse Current At

Rated DC Blocking

Voltage

I_R

V_R=75Volts

1.0µA

Diode Capacitance

C_D

T_rr

2pF

4ns

Measured at 1.0MHz,

V_R=0V

I_F=I_R=10mA

Irr=0.1I_R

Suggested Solder

Pad Layout

0.70

Reverse Recovery

Time

0.90

1.90

0.65

www.mccsemi.com

Revision: C

2013/01/01

1 of 2

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