Datasheet > BAS16WT1G_12

BAS16WT1G_12

更新时间： 2022-05-16 21:25:37

品牌	Logo	应用领域
安森美 - ONSEMI		二极管开关
页数	文件大小	规格书
5页	134K
描述
Silicon Switching Diode

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BAS16WT1G_12 数据手册

BAS16WT1G, SBAS16WT1G

Silicon Switching Diode

Features

• AEC−Q101 Qualified and PPAP Capable

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

http://onsemi.com

CATHODE

ANODE

MAXIMUM RATINGS (T = 25°C)

MARKING

DIAGRAM

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

Recurrent Peak Forward Current

200

500

A6 MG

SC−70

CASE 419

STYLE 2

Peak Forward Surge Current

Pulse Width = 10 ms

FM(surge)

Total Power Dissipation,

One Diode Loaded T = 25°C

200

1.6

= Specific Device Code

= Date Code

= Pb−Free Package

Derate above 25°C

Mounted on a Ceramic Substrate

(10 x 8 x 0.6 mm)

mW/°C

(*Note: Microdot may be in either location)

Operating and Storage Junction

Temperature Range

T , T

−55 to

+150

°C

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

†

Device

Package

Shipping

BAS16WT1G

SC−70

(Pb−Free)

3000 / Tape & Reel

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

SBAS16WT1G

SC−70

(Pb−Free)

3000 / Tape & Reel

Thermal Resistance,

Junction−to−Ambient

One Diode Loaded

Mounted on a Ceramic Substrate

(10 x 8 x 0.6 mm)

625

°C/W

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

October, 2011− Rev. 9

BAS16WT1/D

12 3 4 5

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