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BAQ33 PDF预览

BAQ33

更新时间: 2024-11-13 22:05:47
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
3页 51K
描述
Silicon Planar Diodes

BAQ33 技术参数

生命周期:Obsolete包装说明:O-LELF-R2
Reach Compliance Code:unknown风险等级:5.71
Is Samacsys:N二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-213AAJESD-30 代码:O-LELF-R2
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified表面贴装:YES
端子形式:WRAP AROUND端子位置:END
Base Number Matches:1

BAQ33 数据手册

 浏览型号BAQ33的Datasheet PDF文件第2页浏览型号BAQ33的Datasheet PDF文件第3页 
BAQ33...BAQ35  
Vishay Telefunken  
Silicon Planar Diodes  
Features  
Very low reverse current  
Applications  
Protection circuits, time delay circuits, peak follower  
circuits, logarithmic amplifiers  
94 9371  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
30  
60  
Unit  
V
V
BAQ33  
BAQ34  
BAQ35  
V
R
V
R
V
R
125  
V
Peak forward surge current  
Forward current  
Junction temperature  
Storage temperature range  
t =1 s  
p
I
2
200  
200  
A
mA  
C
FSM  
I
F
T
j
T
–65...+200  
C
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
on PC board 50mmx50mmx1.6mm  
Symbol  
Value  
500  
Unit  
K/W  
R
thJA  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol Min  
Typ Max Unit  
Forward voltage  
Reverse current  
I =100mA  
V
1
3
0.5  
1
1
1
V
nA  
A
nA  
nA  
nA  
V
F
F
E
300lx, V  
I
I
I
I
I
1
R
R
E
E
E
E
300lx, V , T =125 C  
300lx, V =15V  
300lx, V =30V  
300lx, V =60V  
R
j
R
R
R
R
BAQ33  
BAQ34  
BAQ35  
BAQ33  
BAQ34  
BAQ35  
0.5  
0.5  
0.5  
R
R
R
Breakdown voltage I =5 A, t /T=0.01, t =0.3ms  
V
(BR)  
V
(BR)  
V
(BR)  
40  
70  
140  
R
p
p
V
V
Diode capacitance  
V =0, f=1MHz  
R
C
D
3
pF  
Document Number 85537  
Rev. 2, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (3)  

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