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BAL99_03 PDF预览

BAL99_03

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
美台 - DIODES 二极管
页数 文件大小 规格书
2页 101K
描述
High-speed diode

BAL99_03 数据手册

 浏览型号BAL99_03的Datasheet PDF文件第2页 
Surface Mount Switching Diode  
COMCHIP  
www.comchip.com.tw  
Voltage: 70 Volts  
Current: 215mA  
BAV99 Thru BAW56  
Features  
Fast Switching Speed  
Surface Mount PackageIdeally Suited  
for Automatic Insertio  
For General PurposeSwitching Applications  
High Conductance  
SOT-23  
.119 (3.0)  
Mechanical data  
Case: SOT -23, Plastic  
.110 (2.8)  
.020 (0.5)  
Top View  
Approx. Weight: 0.008 gram  
3
This diodes isalso available inother  
configurations including adual common  
cathode with typedesignation BAV70, a dual  
common anodes withtype designation  
BAW56 and single chip inside withtype  
Designation BAL99  
1
2
BAV99  
BAL99  
.037(0.95)  
.037(0.95)  
ANODE  
CATHODE  
1
1
2
3
3
ANODE  
ANODE  
2
CATHODE  
CATHODE  
CATHODE  
ANODE  
.103 (2.6)  
.086 (2.2)  
CATHODE  
ANODE  
1
1
.020 (0.5) .020 (0.5)  
3
3
CATHODE  
ANODE  
2
2
Dimensions in inches (millimeters)  
ANODE  
CATHODE  
BAV70  
Maximum Ratings  
BAW56  
Rating  
Symbol  
VR  
Value  
70  
215  
500  
Units  
VDC  
mAdc  
mAdc  
Continuous Reverse Voltage  
Peak Forward Current  
Peak Forward Surge Current  
IF  
I
FM(surge)  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
225  
1.8  
556  
300  
Units  
mW  
mW/°C  
°C/W  
mW  
mW/°C  
°C/W  
°C  
Total Device Dissipation FR– 5 Board(1)  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation Alumina Substrate,(2) TA = 25°C  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
TA = 25°C  
PD  
RșJA  
PD  
2.4  
417  
–55 to +150  
RșJA  
TJ, Tst  
g
Electrical Characterics (TA = 25°C unless otherwise noted)  
Characteristic (OFF CHARACTERISTICS)  
Symbol  
V(BR)  
Max  
-
Units  
Vdc  
Min  
70  
Reverse Breakdown Voltage ( I(BR) = 100 uAdc )  
Reverse Voltage Leakage Current  
VR = 25 Vdc, TJ = 150°C  
30  
2.5  
50  
-
-
-
IR  
V
V
R = 70 Vdc  
R = 70 Vdc, TJ = 150°C  
uAdc  
pF  
CD  
Diode Capacitance (VR = 0, f = 1.0 MHz))  
Forward Voltage F = 1.0 mAdc  
1.5  
715  
855  
1000  
1250  
I
-
-
-
-
I
I
I
F = 10 mAdc  
F = 50 mAdc  
F = 150 mAdc  
VF  
Trr  
mV  
nS  
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0mAdc) RL = 100ȍ  
6.0  
1.FR–5 = 1.0 X 0.75X 0.062 in. 2.Aluminum = 0.4X 0.3X 0.024 in. 99.5% aluminum.  
Page 1  
MDS0210001A  

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