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BA6247FP-Y_11 PDF预览

BA6247FP-Y_11

更新时间: 2022-10-14 18:46:53
品牌 Logo 应用领域
罗姆 - ROHM 驱动器电机
页数 文件大小 规格书
12页 258K
描述
1.0A or More Reversible Motor Drivers (2 Motors)

BA6247FP-Y_11 数据手册

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Technical Note  
BA6247FP-Y,BA6238A  
11) Testing on application boards  
When testing the IC on an application board, connecting a capacitor to a low impedance pin subjects the IC to stress.  
Therefore, always discharge capacitors after each process or step. Always turn the IC's power supply off before  
connecting it to or removing it from the test setup during the inspection process. Ground the IC during assembly steps  
as an antistatic measure. Use similar precaution when transporting or storing the IC.  
12) Switching of rotating direction (FWD/REV)  
When the rotating direction is changed over by the motor rotating condition, switch the direction after the motor is  
temporarily brought to the BRAKE condition or OPEN condition. It is recommended to keep the relevant conditions as  
follows:  
via BRAKE: Longer than braking time*.  
(* the time required for the output L terminal to achieve potential below GND when brake is activated.)  
13) Regarding the input pin of the IC  
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements, in order to keep them  
isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a  
parasitic diode or transistor. For example, the relation between each potential is as follows:  
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.  
When GND > Pin B, the P-N junction operates as a parasitic transistor.  
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual  
interference among circuits, as well as operating malfunctions and physical damage. Therefore, do not use methods by  
which parasitic diodes operate, such as applying a voltage lower than the GND (P substrate) voltage to an input pin.  
Resistor  
Transistor (NPN)  
Pin A  
Pin B  
Pin B  
B
C
N
E
Pin A  
B
C
E
N
P+  
P+  
P+  
N
N
N
P+  
P
Parasitic  
element  
N
N
P
P substrate  
P substrate  
Parasitic  
element  
GND  
GND  
GND  
GND  
Parasitic element  
Parasitic element  
Other adjacent elements  
Fig.17 Example of monolithic IC structure  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.05 - Rev.B  
10/11  

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