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BA6129AF-E2 PDF预览

BA6129AF-E2

更新时间: 2024-01-26 17:02:19
品牌 Logo 应用领域
罗姆 - ROHM 光电二极管
页数 文件大小 规格书
10页 114K
描述
Power Supply Support Circuit, Fixed, 1 Channel, +3.5VV, BIPolar, PDSO8, SOP-8

BA6129AF-E2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:LSOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.68
可调阈值:NO模拟集成电路 - 其他类型:POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码:R-PDSO-G8JESD-609代码:e3/e2
长度:5 mm信道数量:1
功能数量:1端子数量:8
最高工作温度:75 °C最低工作温度:-20 °C
封装主体材料:PLASTIC/EPOXY封装代码:LSOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:1.6 mm子类别:Power Management Circuits
最大供电电流 (Isup):2 mA标称供电电压 (Vsup):5 V
表面贴装:YES技术:BIPOLAR
温度等级:COMMERCIAL EXTENDED端子面层:TIN/TIN COPPER
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL阈值电压标称:+3.5V
处于峰值回流温度下的最长时间:10宽度:4.4 mm
Base Number Matches:1

BA6129AF-E2 数据手册

 浏览型号BA6129AF-E2的Datasheet PDF文件第3页浏览型号BA6129AF-E2的Datasheet PDF文件第4页浏览型号BA6129AF-E2的Datasheet PDF文件第5页浏览型号BA6129AF-E2的Datasheet PDF文件第7页浏览型号BA6129AF-E2的Datasheet PDF文件第8页浏览型号BA6129AF-E2的Datasheet PDF文件第9页 
Memory ICs  
BA6129AF / BA6162 / BA6162F  
Circuit operation  
These ICs have two distinct functions, a logic output function and a power supply switching function.  
The logic output circuit consists of the following:  
(1) Reset output (NPN Tr open collector)  
(2) CS output  
(PNP Tr open collector + pull-down resistor)  
(3) CSB output (NPN Tr open collector + pull-up resistor)  
The power supply switching circuit consists of a PNP  
power transistor and an SBD (Schottky barrier diode).  
The normal power supply VCC and the battery backup  
power supply (VBAT) are both connected to the switch-  
ing circuit. When the PNP power transistor is turned on  
and off, the IC power is switched from the normal  
power supply to the battery backup power supply, and  
vice versa.  
BA6162 / F: VS = 4.2Vtyp. when VCC drops, and VS +  
0.1Vtyp. when VCC rises), the Reset signal (Low) and  
the CS signal (CS-Low, CSB-High) are output by the  
logic output function, and the SRAM (or other memory  
device) is switched to backup mode.  
If the power supply VCC drops further and goes below  
the switching voltage (BA6129AF and BA6162 / F: VB =  
3.3Vtyp. when VCC drops, VB + 0.1Vtyp. when VCC  
rises), the SBD develops a forward bias because the  
PNP power transistor is off. The power supply output  
VO switches from the power supply VCC to the battery  
power supply (VBAT).  
The power supply voltage detection circuit consists of a  
standard voltage source VREF and a hysteresis com-  
parator. The power supply VCC is detected using a split  
resistance. When the power supply voltage drops  
below the detection voltage (BA6129AF: VS = 3.5Vtyp.  
when VCC drops and VS + 0.1Vtyp. when VCC rises;  
When the normal power supply VCC rises, the above  
process is reversed.  
(BA6129AF) (BA6162 / F)  
5V  
VCC  
VS [3.5VTyp.] [4.2VTyp.]  
VB  
[3.3VTyp.]  
OV  
VO (Vcc) [5V—VSAT1]  
VO  
VO (BAT) [3V—VSAT2]  
OV  
VRESH [Լ VCC]  
RESET  
VRESL [Լ GND]  
VCSH [Լ VCC]  
CS  
VCSL [Լ GND]  
CSB  
VCSBH [Լ VO]  
VCSBL [Լ GND]  
Fig. 2 Timing chart  
6

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