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BA6129AF-E2 PDF预览

BA6129AF-E2

更新时间: 2024-01-08 06:35:06
品牌 Logo 应用领域
罗姆 - ROHM 光电二极管
页数 文件大小 规格书
10页 114K
描述
Power Supply Support Circuit, Fixed, 1 Channel, +3.5VV, BIPolar, PDSO8, SOP-8

BA6129AF-E2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:LSOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.68
可调阈值:NO模拟集成电路 - 其他类型:POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码:R-PDSO-G8JESD-609代码:e3/e2
长度:5 mm信道数量:1
功能数量:1端子数量:8
最高工作温度:75 °C最低工作温度:-20 °C
封装主体材料:PLASTIC/EPOXY封装代码:LSOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:1.6 mm子类别:Power Management Circuits
最大供电电流 (Isup):2 mA标称供电电压 (Vsup):5 V
表面贴装:YES技术:BIPOLAR
温度等级:COMMERCIAL EXTENDED端子面层:TIN/TIN COPPER
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL阈值电压标称:+3.5V
处于峰值回流温度下的最长时间:10宽度:4.4 mm
Base Number Matches:1

BA6129AF-E2 数据手册

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Memory ICs  
BA6129AF / BA6162 / BA6162F  
BA6162 / F (unless otherwise noted, Ta = 25°C, VRRES = VCC = 5V, RRES = 10k)  
Parameter  
Symbol  
ICC  
Min.  
Typ.  
Max.  
2.0  
0.05  
Unit  
mA  
V
Conditions  
VCC = 5V, VBAT = 3V  
No-load current dissipation  
I / O voltage differential 1  
Vo output voltage 1  
VSAT1  
VO1  
0.03  
4.97  
4.90  
4.86  
4.20  
100  
VCC = 5V, VBAT = 3V, IO = – 1mA  
VCC = 5V, VBAT = 3V, IO = – 1mA  
VCC = 5V, VBAT = 3V, IO = – 15mA  
VCC = 5V, VBAT = 3V, IO = – 30mA  
VCC = HL  
4.95  
4.70  
4.50  
4.00  
V
Vo output voltage 2  
VO2  
V
Vo output voltage 3  
VO3  
V
Detection voltage  
VS  
4.40  
V
VSH  
mV  
V
VCC = LH  
Detection hysteresis voltage  
Reset output low level voltage  
Reset leakage current  
VRESL  
IRESH  
VOPL  
VCSL  
VCSH  
VCSBL  
VCSBH  
KVS  
0.4  
0.1  
1.2  
0.1  
VCC = 3.7V  
µA  
V
VCC = 5V, VRRES = 7V  
0.8  
VCC = HL, VRES Ϲ 0.4V  
VCC = 3.7V, VBAT = 3V, ICS = + 1µA  
VCC = 5V, VBAT = 3V, ICS = – 1µA  
VCC = 5V, VBAT = 3V, ICSB = + 1µA  
VCC = 3.7V, VBAT = 3V, ICSB = – 1µA  
Reset operating limit voltage  
CS output low level voltage  
CS output high level voltage  
CSB output low level voltage  
CSB output high level voltage  
Detection voltage temperature characteristic  
Switching voltage  
V
4.9  
V
0.1  
V
Vo – 0.1  
– 0.05  
3.15  
V
%
/
°C  
+ 0.05  
3.45  
VCC = HL, VBAT = 3V, RO = 200kΩ  
VCC = LH, VBAT = 3V, RO = 200kΩ  
V
VB  
3.30  
100  
mV  
VBH  
Switching hysteresis voltage  
Switching voltage temperature characteristic  
Backup current dissipation  
I / O voltage differential 2  
Vo output voltage 4  
– 0.05  
%
/
°C  
KVB  
+ 0.05  
0.5  
0.03  
VCC = GND, VBAT = 3V  
µA  
V
ICCB  
VSAT2  
VO4  
VCC = GND, VBAT = 3V, IO = – 1µA  
VCC = GND, VBAT = 3V, IO = – 1µA  
VCC = GND, VBAT = 3V, IO = – 100µA  
IO = – 40mA  
0.20  
2.80  
2.67  
2.70  
2.60  
V
V
VO5  
Vo output voltage 5  
VCC – 0.5  
V
VO6  
Vo output voltage 6  
VCC = 5V, VBAT = GND  
µA  
IOR  
Reverse current  
0.1  
(Note) IO, ICS, and ICSB are + when flowing toward the pin and – when flowing away from the pin.  
Not designed for radiation resistance.  
4

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