BA159DG

更新时间： 2024-02-25 20:04:01

品牌	Logo	应用领域
固锝 - GOOD-ARK		整流二极管
页数	文件大小	规格书
2页	167K
描述
Glass Passivated Fast Recovery Rectifiers Reverse Voltage 400 to 1000 Volts Forward Current 1.0 Ampere

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技术参数
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BA159DG 技术参数

生命周期：	Obsolete	包装说明：	PLASTIC PACKAGE-2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.6	其他特性：	FORMED LEAD OPTIONS ARE AVAILABLE
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	O-PALF-W2	元件数量：	1
端子数量：	2	最大输出电流：	1 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	认证状态：	Not Qualified
最大重复峰值反向电压：	1000 V	最大反向恢复时间：	0.25 µs
表面贴装：	NO	端子形式：	WIRE
端子位置：	AXIAL	Base Number Matches：	1

BA159DG 数据手册

BA157G thru BA159G

Glass Passivated Fast Recovery Rectifiers

Reverse Voltage 400 to 1000 Volts Forward Current 1.0 Ampere

Features

Plastic package has Underwriters Laboratories Flammability

Classification 94V-0

High temperature metallurgically bonded construction

For use in high frequency rectifier circuits

Fast switching for high efficiency

Glass passivated cavity-free junction

Capable of meeting environmental standards of MIL-S-19500

1.0 Ampere operation at T_A=55^oC with no thermal runaway

Typical I_Rless than 0.1uA

High temperature soldering guaranteed:

350^oC/10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

Mechanical Data

Case: JEDEC DO-204AL (DO-41), molded plastic over glass

body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 0.012 ounce, 0.33 gram

Maximum Ratings and Electrical Characteristics

Ratings at 25^oC ambient temperature unless otherwise specified.

Parameter

Symbols

BA157G

BA158G

BA159DG

BA159G

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

400

280

400

600

420

600

800

560

800

1000

700

Volts

Maximum DC blocking voltage

1000

Maximum average forward rectified current

0.375" (9.5mm) lead length at T_A=55^oC

I_F(AV)

1.0

Amp

Peak forward surge current

10ms single half sine-wave superimposed on

I_FSM

20.0

Amps

rated load at T_A=25^oC

Maximum instantaneous forward voltage at 1.0A

V_F

I_R

1.3

5.0

Volts

Maximum DC reverse current

at rated DC blocking voltage T_A=25^oC

Maximum reverse recovery time (Note 1)

Typical junction capacitance (Note 2)

Typical thermal resistance (Note 3)

Operating junction temperature range

Storage temperature range

t_rr

150

250

500

C_J

R_θJA

T_J

55.0

^oC/W

^oC

-55 to +150

T_STG

^oC

Notes:

1. Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, I_rr=0.25A

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts

3. Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted

中文翻译

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与BA159DG相关器件

型号	品牌	获取价格	描述	数据表
BA159DGP	VISHAY	获取价格	Glass Passivated Junction Fast Switching Rectifier
BA159DGP/100	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
BA159DGP/4E	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
BA159DGP/4F	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
BA159DGP/4G	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
BA159DGP/4H	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
BA159DGP/51	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
BA159DGP/53	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
BA159DGP/54	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
BA159DGP/56	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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