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BA157G PDF预览

BA157G

更新时间: 2024-11-05 06:41:23
品牌 Logo 应用领域
DAESAN 二极管
页数 文件大小 规格书
2页 322K
描述
CURRENT 1.0 Ampere VOLTAGE 400 to 1000 Volts

BA157G 数据手册

 浏览型号BA157G的Datasheet PDF文件第2页 
CURRENT 1.0 Ampere  
VOLTAGE 400 to 1000 Volts  
BA157G THRU BA159G  
Features  
· Plastic package has Underwrites Laboratory Flammability  
Classification 94V-0  
· Fast switching speed  
DO-41  
· Glass passivated junction  
· High current capability  
· High temperature soldering guaranteed : 250/10 seconds,  
0.375"(9.5mm) lead length, 5 lbs.(2.3kg) tension.  
0.107(2.7)  
0.080(2.0)  
1.0(25.4)  
DIA.  
MIN.  
0.205(5.2)  
0.166(4.2)  
Mechanical Data  
· Case : JEDEC DO-41 molded plastic body  
· Terminals : Plated axial lead solderable per MIL-STD-750,  
method 2026  
· Polarity : Color band denotes cathode end  
· Mounting Position : Any  
1.0(25.4)  
MIN.  
0.034(0.9)  
0.028(0.7)  
DIA.  
· Weight : 0.012 ounce, 0.33 gram  
Dimensions in inches and (millimeters)  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive  
load. For capacitive load, derate by 20%)  
Symbols  
BA157G  
BA158G  
BA159G  
Units  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
V
RRM  
RMS  
400  
280  
400  
600  
420  
600  
1000  
700  
Volts  
Volts  
Volts  
V
Maximum DC blocking voltage  
V
DC  
1000  
Maximum average forward rectified current  
Rload at TA=50℃  
I
(AV)  
1.0  
35.0  
1.3  
Amp  
Amps  
Volts  
μA  
Peak forward surge current 10ms single half  
sine-wave superimposed on rated load at  
Rload at TA=25℃  
I
FSM  
Maximum instantaneous forward voltage  
at 1.0A  
VF  
Maximum DC reverse current at rated DC  
blocking voltage TA=25℃  
I
R
5.0  
Maximum reverse recovery time (Note 1)  
Max. thermal resistance  
Trr  
150  
250  
60  
500  
ns  
/W  
pF  
RθJA  
CJ  
Typical junction capacitance (Note 2)  
6.0  
Operating junction and storage  
temperature range  
T
J
-65 to +175  
TSTG  
Notes:  
(1) Test conditions: I  
F=0.5A, IR=1.0A, Irr=0.25A.  
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.  

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