B772C
-3A , -40V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-126C
FEATURES
Low frequency power amplifier
High Current
Low Speed Switching
Emitter
Collector
Base
CLASSIFICATION OF hFE
Product-Rank
B772C-R
B772C-O
100~200
B772C-Y
160~320
B772C-GR
200~400
Range
60~120
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
0.80
0.45
0.66
1.30
1.17
3.10
2.70
Max.
1.60
0.60
0.86
1.50
1.37
3.30
2.90
A
B
C
D
E
F
7.80
3.00
8.20
3.40
H
J
K
L
M
N
O
10.80
15.30
3.90
11.20
15.70
4.10
4.04
4.24
G
2.28 TYP.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
VCBO
VCEO
VEBO
IC
-40
-30
V
V
-6
V
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
-3
A
PC
1.25
-55~150
W
°C
TJ, TSTG
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-40
-30
-6
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
IC= -100μA, IE=0
IC= -10mA, IB=0
IE= -100μA, IC=0
VCB= -40V, IE=0
-
V
-1
μA
μA
μA
Collector Cut – Off Current
ICEO
-
-10
-1
VCE= -30V, IB=0
Emitter Cut – Off Current
IEBO
-
VEB= -6V, IC=0
60
32
-
400
-
VCE= -2V, IC= -1A
VCE= -2V, IC= -100mA
IC= -2A, IB= -200mA
IC= -2A, IB= -200mA
DC Current Gain
hFE
Collector to Emitter Saturation Voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
-0.5
-1.5
V
V
-
V
CE= -5V, IC= -100mA
Transition Frequency
fT
50
-
-
MHz
f=10MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
23-Aug-2012 Rev. B
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