Datasheet > B772

B772

更新时间： 2024-02-03 06:42:44

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
2页	353K
描述
SOT-89 Plastic-Encapsulate Transistors

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技术参数
数据手册

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B772 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
风险等级：	5.59	湿度敏感等级：	1
峰值回流温度（摄氏度）：	260	处于峰值回流温度下的最长时间：	10
Base Number Matches：	1

B772 数据手册

WILLAS

B772

SOT-89 Plastic-Encapsulate Transistors

SOT-89

TRANSISTOR（PNP）

1 2 3

FEATURES

1. ^BASE

Low speed switching

Pb-Free package is available

2. ^COLLETOR

3. ^EMITTER

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-40

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-30

-5

Collector Current -Continuous

Collector Power Dissipation

Thermal Resistance, junction to Ambient

Junction Temperature

-3

P_C

0.5

R_ӨJA

T_j

250

150

-55~150

℃

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=-100μA ,I_E=0

I_C= -10mA , I_B=0

I_E= -100μA,I_C=0

V_CB= -40V, I_E=0

V_CE=-30V, I_B=0

V_EB=-6V, I_C=0

Min

-40

-30

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-1

-10

-1

μA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE= -2V, I_C= -1A

I_C=-2A, I_B= -0.2A

400

-0.5

Collector-emitter saturation voltage

V_CE(sat)

Base-emitter saturation voltage

V_BE(sat)

I_C=-2A, I_B= -0.2A

-1.5

_CE= -5V, I_C=-0.1A

Transition frequency

f_T

MHz

f =10MHz

CLASSIFICATION OF h_FE

Rank

Range

60-120

100-200

160-320

200-400

2012-10

WILLAS ELECTRONIC CORP.

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