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B350B-M3/52T PDF预览

B350B-M3/52T

更新时间: 2024-11-07 14:27:31
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线光电二极管
页数 文件大小 规格书
4页 89K
描述
Rectifier Diode,

B350B-M3/52T 技术参数

生命周期:Active包装说明:SMB, 2 PIN
Reach Compliance Code:unknown风险等级:5.64
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.66 V
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
最大非重复峰值正向电流:60 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:50 V最大反向电流:100 µA
表面贴装:YES技术:SCHOTTKY
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

B350B-M3/52T 数据手册

 浏览型号B350B-M3/52T的Datasheet PDF文件第2页浏览型号B350B-M3/52T的Datasheet PDF文件第3页浏览型号B350B-M3/52T的Datasheet PDF文件第4页 
B350B, B360B  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Schottky Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• High surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AA (SMB)  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
PRIMARY CHARACTERISTICS  
Package  
DO-214AA (SMB)  
IF(AV)  
3.0 A  
50 V, 60 V  
60 A  
MECHANICAL DATA  
Case: DO-214AA (SMB)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
VRRM  
IFSM  
VF at IF = 3.0 A  
TJ max.  
0.51 V  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
Diode variations  
Single die  
E3 suffix meets JESD 201 class 2 whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
B350B  
B35  
B360B  
B36  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
VRRM  
IF(AV)  
50  
60  
V
A
Maximum average forward rectified current at TL (fig. 1)  
3.0  
60  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
MAX.  
UNIT  
TJ = 25 °C  
0.58  
0.51  
-
0.66  
0.59  
100  
10  
(1)  
Maximum instantaneous forward voltage  
IF = 3.0 A  
Rated VR  
VF  
V
TJ = 125 °C  
TJ = 25 °C  
TJ = 125 °C  
μA  
(2)  
Maximum reverse current  
IR  
3
mA  
Notes  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Pulse test: Pulse width 40 ms  
(2)  
Revision: 17-Jan-14  
Document Number: 89122  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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