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B340AE3 PDF预览

B340AE3

更新时间: 2024-11-04 15:28:19
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线光电二极管
页数 文件大小 规格书
4页 202K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN

B340AE3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-214AA包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.3其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:65 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:40 V表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

B340AE3 数据手册

 浏览型号B340AE3的Datasheet PDF文件第2页浏览型号B340AE3的Datasheet PDF文件第3页浏览型号B340AE3的Datasheet PDF文件第4页 
B330LA & B340A  
Vishay General Semiconductor  
New Product  
High-Current Density Surface Mount Schottky Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
3.0 A  
30 V, 40 V  
65 A  
VF  
0.50 V, 0.55 V  
150 °C  
Tj max.  
DO-214AC (SMA)  
Features  
Mechanical Data  
• Low profile package  
Case: DO-214AA (SMB)  
• Ideal for automated placement  
Epoxy meets UL 94V-0 Flammability rating  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• High surge capability  
Polarity: Color band denotes the cathode end  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in low voltage high frequency inverters, free-  
wheeling, dc-to-dc converters, and polarity protection  
applications  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Device marking code  
Symbol  
B330LA  
B33  
B340A  
B34  
Unit  
V
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
30  
40  
V
Maximum RMS voltage  
21  
30  
28  
40  
V
V
A
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TL (See Fig. 1)  
IF(AV)  
IFSM  
3.0  
65  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dv/dt  
TJ  
10000  
V/µs  
°C  
- 65 to + 150  
- 65 to + 150  
TSTG  
°C  
Document Number 88896  
02-Nov-05  
www.vishay.com  
1

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