Datasheet > B20V140

B20V140

更新时间： 2024-11-09 03:20:23

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描述
SILICON MICROWAVE POWER TRANSISTOR

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B20V140 数据手册

BIPOLARICS,INC.

Part Number B20V140

SILICON MICROWAVE POWER TRANSISTOR

PRODUCT DATA SHEET

FEATURES:

DESCRIPTION AND APPLICATIONS:

Bipolarics' B20V140 is a high performance, low cost silicon bipolar

transistor intended for linear power applications at frequencies of 0.5 to

2.6 GHz. Uniformity and reliability are assured by the use of advanced

process techniques: ion implanted junctions, ion implanted ballast

resistors and gold metallization. When the B20V140 is bonded common

emitter, linear output power of 1 Watt can be achieved. By driving part

type B20V180 or B20V1160 combination thereof, higher output power

can be achieved.

• High Output Power

27.0 dBm, P_1dB@ 1.0 GHz

• High Gain Bandwidth Product

f = 6.0 GHz @ I_C= 100 mA

• High Gain

Absolute Maximum Ratings:

G_PE= 14.0 dB @ 1.0 GHz

SYMBOL

PARAMETERS

RATING

UNITS

• Ceramic, BeO & Stripline packages

V_CBO

Collector-Base Voltage

available

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

3.0

PERFORMANCE DATA:

Collector Current (instantaneous)

Junction Temperature

160

200

^oC

• Electrical Characteristics (T_A= 25^oC)

T_STG

Storage Temperature

-65 to +150

SYMBOL

PARAMETERS & CONDITIONS

UNIT

MIN.

TYP.

MAX.

V_CE=15V, I_C= 100 mA, Class A, unless stated

Power output at 1 dB compression:

f = 1.0 GHz

dBm

27.0

9.0

1dB

Gain at 1dB compression:

Collector Efficiency

1dB

Class A

C_CB

h_FE

Collector Base Capacitance:

f = 1 MHz, I_E= 0

0.7

1.0

Forward Current Transfer Ratio: V_CE= 8V, I_C=50 mA

Total Power Dissipation

100

1.5

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