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B1S-T3-LF PDF预览

B1S-T3-LF

更新时间: 2024-10-29 13:05:47
品牌 Logo 应用领域
WTE 整流二极管桥式整流二极管光电二极管
页数 文件大小 规格书
3页 59K
描述
Bridge Rectifier Diode, 1 Phase, 0.5A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MB-S, 4 PIN

B1S-T3-LF 数据手册

 浏览型号B1S-T3-LF的Datasheet PDF文件第2页浏览型号B1S-T3-LF的Datasheet PDF文件第3页 
WTE  
PO WER SEMICONDUCTORS  
B1S – B8S  
0.5A MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER  
Features  
!
Glass Passivated Die Construction  
G
D
!
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Surge Current Capability  
Designed for Surface Mount Application  
Plastic Material – UL Recognition Flammability  
Classification 94V-O  
-
+
~
H
B
~
E
C
M
MB-S  
Min  
4.50  
3.80  
0.006  
A
K
L
Dim  
A
Max  
4.90  
4.20  
0.35  
0.20  
7.0  
Mechanical Data  
J
B
!
!
Case: Molded Plastic  
C
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Case  
Weight: 0.22 grams (approx.)  
Mounting Position: Any  
D
E
!
!
!
!
G
H
0.70  
1.30  
2.30  
2.30  
1.10  
1.70  
2.70  
2.70  
3.00  
0.80  
J
Marking: Type Number  
K
L
M
0.50  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol  
B1S  
B2S  
B4S  
B6S  
B8S  
Unit  
VRRM  
VRWM  
VR  
100  
70  
200  
140  
400  
600  
420  
800  
560  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
0.5  
V
A
Average Rectified Output Current  
@TA = 40°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
I
FSM  
30  
A
I2t Rating for Fusing (t < 8.35ms)  
I2t  
10  
A2s  
V
Forward Voltage per element  
@IF = 0.5A  
VFM  
IRM  
1.0  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 125°C  
5.0  
500  
µA  
Typical Junction Capacitance (per leg) (Note 1)  
Typical Thermal Resistance (per leg) (Note 2)  
Operating and Storage Temperature Range  
Cj  
25  
85  
pF  
K/W  
°C  
RJA  
Tj, TSTG  
-55 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Thermal resistance junction to ambient mounted on PC board with 13mm2 copper pads.  
B1S – B8S  
1 of 3  
© 2002 Won-Top Electronics  

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