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B150-E3 PDF预览

B150-E3

更新时间: 2024-11-28 14:47:51
品牌 Logo 应用领域
威世 - VISHAY 瞄准线光电二极管
页数 文件大小 规格书
4页 332K
描述
DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode

B150-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.67
其他特性:FREE WHEELING DIODE, LOW POWER LOSS配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):250认证状态:Not Qualified
最大重复峰值反向电压:50 V表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

B150-E3 数据手册

 浏览型号B150-E3的Datasheet PDF文件第2页浏览型号B150-E3的Datasheet PDF文件第3页浏览型号B150-E3的Datasheet PDF文件第4页 
B120 thru B160  
Vishay General Semiconductor  
New Product  
Surface Mount Schottky Barrier Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
1.0 A  
20 V to 60 V  
30 A  
VF  
0.52 V, 0.75 V  
125 °C, 150 °C  
Tj max.  
DO-214AC (SMA)  
Features  
Mechanical Data  
• Low profile package  
Case: DO-214AC (SMA)  
• Ideal for automated placement  
Epoxy meets UL-94V-0 Flammability rating  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Terminals: Matte tin plated (E3 Suffix) leads,  
solderable per J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade.  
Polarity: Color band denotes the cathode end  
Typical Applications  
For use in low voltage, high frequency inverters, free-  
wheeling, dc-to-dc converters, and polarity protection  
applications.  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Device marking code  
Symbol  
B120  
B12  
20  
B130  
B13  
30  
B140  
B14  
40  
B150  
B15  
50  
B160  
B16  
60  
Unit  
V
Maximum repetitive peak reverse voltage  
VRRM  
IF(AV)  
V
Maximum average forward rectified current  
at TL (See Fig. 1)  
1.0  
A
Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
30  
A
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dv/dt  
TJ  
10000  
V/µs  
°C  
- 65 to + 125  
- 65 to + 150  
TSTG  
- 65 to + 150  
°C  
Document Number 88946  
23-Dec-05  
www.vishay.com  
1

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