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B150-E3/61T PDF预览

B150-E3/61T

更新时间: 2024-11-26 14:50:07
品牌 Logo 应用领域
威世 - VISHAY 瞄准线光电二极管
页数 文件大小 规格书
4页 87K
描述
Diode Schottky 50V 1A 2-Pin SMA T/R

B150-E3/61T 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:DO-214AC包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.23其他特性:FREE WHEELING DIODE, LOW POWER LOSS
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.75 V
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:50 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

B150-E3/61T 数据手册

 浏览型号B150-E3/61T的Datasheet PDF文件第2页浏览型号B150-E3/61T的Datasheet PDF文件第3页浏览型号B150-E3/61T的Datasheet PDF文件第4页 
B120-E3, B130-E3, B140-E3, B150-E3, B160-E3  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• High surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AC (SMA)  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
IF(AV)  
1.0 A  
For use in low voltage, high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
VRRM  
IFSM  
VF  
20 V, 30 V, 40 V, 50 V, 60 V  
30 A  
Note  
0.52 V, 0.75 V  
These devices are not AEC-Q101 qualified  
TJ max.  
Package  
125 °C, 150 °C  
DO-214AC  
Single  
MECHANICAL DATA  
Diode variations  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
B120  
B12  
20  
B130  
B13  
30  
B140  
B150  
B15  
50  
B160  
B16  
60  
UNIT  
Device marking code  
B14  
Maximum repetitive peak reverse voltage  
VRRM  
IF(AV)  
40  
V
A
Maximum average forward rectified current (fig. 1)  
1.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
30  
A
Voltage rate of change (rated VR)  
dV/dt  
TJ  
10 000  
V/μs  
°C  
Operating junction temperature range  
- 65 to + 125  
- 65 to + 150  
Storage temperature range  
TSTG  
- 65 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
B120  
B130  
B140  
B150  
B160  
UNIT  
(1)  
Maximum instantaneous forward voltage  
1.0 A  
VF  
0.52  
0.75  
5.0  
V
TA = 25 °C  
0.2  
(2)  
Maximum reverse current at rated VR  
IR  
mA  
TA = 100 °C  
6.0  
Notes  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Pulse test: Pulse width 40 ms  
(2)  
Revision: 13-Aug-13  
Document Number: 88946  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

B150-E3/61T 替代型号

型号 品牌 替代类型 描述 数据表
B150-E3/5AT VISHAY

完全替代

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B150-M3/61T VISHAY

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