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B1366 PDF预览

B1366

更新时间: 2024-11-08 21:54:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器功率放大器
页数 文件大小 规格书
4页 53K
描述
LOW FREQUENCY POWER AMPLIFIER

B1366 数据手册

 浏览型号B1366的Datasheet PDF文件第2页浏览型号B1366的Datasheet PDF文件第3页浏览型号B1366的Datasheet PDF文件第4页 
KSB1366  
LOW FREQUENCY POWER AMPLIFIER  
Complement to KSD2012  
TO-220F  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
- 60  
Units  
V
V
V
V
Collector-Base Voltage  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current(DC)  
Base Current  
- 60  
V
CEO  
EBO  
- 7  
V
I
I
- 3  
A
C
- 0.5  
2
A
B
P
Collector Dissipation (T =25°C)  
W
W
°C  
°C  
C
a
P
T
T
Collector Dissipation (T =25°C)  
25  
C
C
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
I
= - 50mA, I = 0  
- 60  
V
CEO  
CBO  
EBO  
C
B
I
I
V
V
= - 60V, I = 0  
- 100  
- 100  
320  
µA  
µA  
CB  
EB  
E
= - 7V, I = 0  
C
h
h
V
V
= - 5V, I = - 0.5A  
100  
20  
FE1  
FE2  
CE  
CE  
C
= - 5V, I = - 3A  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
I
= - 2A, I = - 0.2A  
- 0.5  
- 0.7  
9
- 1  
- 1  
V
V
CE  
C
B
V
V
= - 5V, I = - 0.5A  
C
BE  
CE  
CE  
f
Current Gain Bandwidth Product  
= - 5V, I = - 0.5A  
MHz  
T
C
h
Classification  
FE  
Classification  
Y
G
h
100 ~ 200  
150 ~ 320  
FE1  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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