是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | O-PBCY-W4 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.67 |
最小击穿电压: | 200 V | 外壳连接: | ISOLATED |
配置: | BRIDGE, 4 ELEMENTS | 二极管元件材料: | SILICON |
二极管类型: | BRIDGE RECTIFIER DIODE | JESD-30 代码: | O-PBCY-W4 |
JESD-609代码: | e0 | 最大非重复峰值正向电流: | 45 A |
元件数量: | 4 | 相数: | 1 |
端子数量: | 4 | 最大输出电流: | 0.9 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 200 V |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
B125C800G/51-E4 | VISHAY |
获取价格 |
DIODE 0.9 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE WOG, 4 PIN, Bridge Rect | |
B125C800G/72 | VISHAY |
获取价格 |
Bridge Rectifier Diode, 1 Phase, 0.9A, 200V V(RRM), Silicon, PLASTIC, CASE WOG, 4 PIN | |
B125C800G/72-E4 | VISHAY |
获取价格 |
DIODE 0.9 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE WOG, 4 PIN, Bridge Rect | |
B125C800GE4 | VISHAY |
获取价格 |
DIODE 0.9 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE WOG, 4 PIN, | |
B125C800G-E4 | VISHAY |
获取价格 |
DIODE 0.9 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE WOG, 4 PIN, | |
B125C800G-E4/51 | VISHAY |
获取价格 |
Glass Passivated Single-Phase Bridge Rectifier | |
B125C800-LF | WTE |
获取价格 |
Bridge Rectifier Diode, 1 Phase, 0.8A, 300V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, WOB, | |
B125C800W | MICRO-ELECTRONICS |
获取价格 |
Bridge Rectifier Diode, 1 Phase, 1A, 300V V(RRM), Silicon, CASE R-6, 4 PIN | |
B125D | LGE |
获取价格 |
Silicon Bridge Rectifiers | |
B125D | SEMIKRON |
获取价格 |
Si-Bridge Rectifiers |