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B125S2A PDF预览

B125S2A

更新时间: 2024-02-11 02:22:23
品牌 Logo 应用领域
德欧泰克 - DIOTEC 光电二极管
页数 文件大小 规格书
2页 115K
描述
Bridge Rectifier Diode, 1 Phase, 2.3A, 250V V(RRM), Silicon, DIP-4

B125S2A 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DIP包装说明:R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.45其他特性:UL RECOGNIZED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PDSO-G4
最大非重复峰值正向电流:72 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:2.3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:250 V表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

B125S2A 数据手册

 浏览型号B125S2A的Datasheet PDF文件第2页 
B40S2A ... B380S2A  
Version 2012-11-07  
B40S2A ... B380S2A  
Surface Mount Si-Bridge-Rectifiers  
Si-Brückengleichrichter für die Oberflächenmontage  
Nominal current  
Nennstrom  
2.3 A  
Alternating input voltage  
Eingangswechselspannung  
40...380 V  
7.9±0.4  
5.1  
10.2±0.4  
8.3-0.1  
Plastic case SO-DIL  
Kunststoffgehäuse SO-DIL  
8.3 x 6.4 x 3.1  
[mm]  
~
~
Weight approx. – Gewicht ca.  
0.4 g  
Type  
Typ  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
+
1.3  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions - Maße [mm]  
Recognized Product – Underwriters Laboratories Inc.® File E175067  
Anerkanntes Produkt – Underwriters Laboratories Inc.® Nr. E175067  
Maximum ratings  
Grenzwerte  
Type  
Typ  
Max. alternating input voltage  
Max. Eingangswechselspannung  
VVRMS [V]  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V] 1)  
B40S2A  
B80S2A  
B125S2A  
B250S2A  
B380S2A  
40  
80  
80  
160  
125  
250  
380  
250  
600  
800  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
IFRM  
IFSM  
i2t  
13 A 2)  
65/72 A  
21 A2s  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+150°C  
-50...+150°C  
1
2
Per Diode – Pro Diode  
Max. temperature of the terminals TT = 100°C – Max. Temperatur der Anschlüsse TT = 100°C  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 

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